DirectFET Dual N-Channel Power MOSFET Applications V V R R Charge and Discharge Switch for Battery Application DSS GS DS(on) DS(on) Isolation Switch for Input Power or Battery Application 20V max 12V max 3.8m 4.5V 5.4m 2.5V Q Q Q Q Q V g tot gd gs2 rr oss gs(th) Features and Benefits 27nC 9.5nC 1.4nC 21nC 15nC 0.80V Environmentaly Friendly Product RoHs Compliant, Halogen Free Dual Common-Drain N-Channel MOSFETs Provides G G D D High Level of Integration and Very Low RDS(on) S S DirectFET ISOMETRIC Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details) SQ SX ST SA MQ MX MT MP MC Description The IRL6297SDPbF combines the latest HEXFET N-Channel Power MOSFET Silicon technology with the advanced DirectFET packaging to achieve the lowest on-state resistance in a package that has the footprint smaller than an SO-8 and only 0.6 mm profile. The DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. Base Part Number Package Type Standard Pack Orderable part number Form Quantity IRL6297SDPbF DirectFET Small Can Tape and Reel 4800 IRL6297SDTRPbF Absolute Maximum Ratings Max. Parameter Units V Drain-to-Source Voltage 20 DS V V Gate-to-Source Voltage 12 GS Continuous Drain Current, V 10V 15 I T = 25C A GS D I T = 70C Continuous Drain Current, V 10V 12 GS D A A Continuous Drain Current, V 10V 58 I T = 25C C GS D 140 I Pulsed Drain Current DM 20 14.0 I = 12A I = 15A D V = 16V D 12.0 DS V = 10V 15 DS 10.0 V = 4.0V DS 8.0 10 6.0 T = 125C J 4.0 5 2.0 T = 25C J 0 0.0 0 1 2 3 4 5 6 7 8 9 10 11 12 0 1020 3040506070 Q Total Gate Charge (nC) G V Gate -to -Source Voltage (V) GS, Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage Fig 1. Typical On-Resistance vs. Gate Voltage Click on this section to link to the appropriate technical paper. T measured with thermocouple mounted to top (Drain) of part. C Click on this section to link to the DirectFET Website. Repetitive rating pulse width limited by max. junction temperature. Surface mounted on 1 in. square Cu board, steady state. Typical R (m) DS(on) V , Gate-to-So urce Voltage (V) GSIRL6297SDPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250A DSS GS D V /T Breakdown Voltage Temp. Coefficient 6.1 mV/C Reference to 25C, I = 1.0mA DSS J D R Static Drain-to-Source On-Resistance 3.8 4.9 V = 4.5V, I = 15A DS(on) GS D m 5.4 6.9 V = 2.5V, I = 12A GS D V Gate Threshold Voltage 0.50 0.80 1.10 V GS(th) V = V , I = 35A DS GS D V /T Gate Threshold Voltage Coefficient -4.1 mV/C GS(th) J I Drain-to-Source Leakage Current 1.0 V = 16V, V = 0V DSS DS GS A 150 V = 16V, V = 0V, T = 150C DS GS J I Gate-to-Source Forward Leakage 100 V = 12V GSS GS nA Gate-to-Source Reverse Leakage -100 V = -12V GS gfs Forward Transconductance 60 S V = 10V, I =12A DS D Q Total Gate Charge 54 V = 10V, V = 10V, I = 12A g DS GS D Q Total Gate Charge 27 g Q Pre- Vth Gate-to-Source Charge 2.2 V = 10V gs1 DS nC Q Post -Vth Gate-to-Source Charge 1.4 V = 4.5V gs2 GS Q Gate-to-Drain Charge 9.5 I = 12A gd D Q Gate Charge Overdrive 13.9 godr See Fig.15 Q Switch charge (Q + Q ) 10.9 sw gs2 gd Q Output Charge 15 nC V = 16 V, V = 0V oss DS GS R Gate Resistance 1.8 G t Turn-On Delay Time 8.8 V = 10V, V = 4.5V d(on) DD GS t Rise Time 29 I = 12A r D ns t Turn-Off Delay Time 41 R = 2.0 d(off) G See Fig.17 t Fall Time 41 f C Input Capacitance 2245 V = 0V iss GS pF C Output Capacitance 610 V = 10V oss DS = 1.0MHz C Reverse Transfer Capacitance 395 rss Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 25 showing the (Body Diode) A G integral reverse I Pulsed Source Current SM 140 S p-n junction diode. (Body Diode) V Diode Forward Voltage 1.2 V T = 25C, I = 12A, V = 0V SD J S GS t Reverse Recovery Time 28 42 ns T = 25C, I = 12A, V = 10V rr J F DD di/dt = 100 A/s Q Reverse Recovery Charge 21 32 nC rr Pulse width 400s duty cycle 2%.