IRL540S, SiHL540S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) 100 Definition DS Surface Mount R ( )V = 5 V 0.077 DS(on) GS Available in Tape and Reel Q (Max.) (nC) 64 g Dynamic dV/dt Rating Repetitive Avalanche Rated Q (nC) 9.4 gs Logic-Level Gate Drive Q (nC) 27 gd R Specified at V = 4 V and 5 V DS(on) GS 175 C Operating Temperature Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION Third generation Power MOSFETs from Vishay provide the 2 D PAK (TO-263) designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. 2 The D PAK (TO-263) is a surface mount power package G capable of accommodating die size up to HEX-4. It provides the highest power capability and the lowest possible D on-resistance in any existing surface mount package. The G 2 S D PAK (TO-263) is suitable for high current applications S because of its low internal connection resistance and can N-Channel MOSFET dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION 2 2 Package D PAK (TO-263) D PAK (TO-263) a Lead (Pb)-free and Halogen-free SiHL540S-GE3 SiHL540STRL-GE3 a IRL540SPbF IRL540STRLPbF Lead (Pb)-free a SiHL540S-E3 SiHL540STL-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage 100 V DS V Gate-Source Voltage 10 V GS 28 = 25 C T C Continuous Drain Current V at 5 V I GS D A 20 T = 100 C C a 110 Pulsed Drain Current I DM Linear Derating Factor 1.0 W/C e 0.025 Linear Derating Factor (PCB Mount) b 440 mJ Single Pulse Avalanche Energy E AS a Avalanche Current 28 A I AR a Repetiitive Avalanche Energy 15 mJ E AR Maximum Power Dissipation 150 T = 25 C C W P D e 3.7 Maximum Power Dissipation (PCB Mount) T = 25 C A c Peak Diode Recovery dV/dt dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range - 55 to + 175 T , T J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 841 H, R = 25 , I = 28 A (see fig. 12). DD J g AS c. I 28 A, dI/dt 170 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 90386 www.vishay.com S11-1045-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRL540S, SiHL540S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Maximum Junction-to-Ambient R -40 C/W thJA a (PCB Mount) Maximum Junction-to-Case (Drain) R -1.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 100 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.12 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-Source Leakage I V = 10 V - - 100 nA GSS GS V = 100 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 80 V, V = 0 V, T = 150 C - - 250 DS GS J b V = 5 V I = 17 A - - 0.077 GS D Drain-Source On-State Resistance R DS(on) b V = 4 V I = 14 A - - 0.11 GS D b Forward Transconductance g V = 50 V, I = 17 A 12 - - S fs DS D Dynamic Input Capacitance C - 2200 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 560- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -140- rss Total Gate Charge Q -- 64 g I = 28 A, V = 80 V, D DS Gate-Source Charge Q --V = 5 V 9.4 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --27 gd Turn-On Delay Time t -8.5 - d(on) Rise Time t - 170 - r V = 50 V, I = 28 A, DD D ns b R = 9.0 , R = 1.7 , see fig. 10 g D Turn-Off Delay Time t -35- d(off) Fall Time t -80- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 28 S showing the A G integral reverse a Pulsed Diode Forward Current I - - 110 S SM p - n junction diode b Body Diode Voltage V T = 25 C, I = 28 A, V = 0 V -- 2.5 V SD J S GS Body Diode Reverse Recovery Time t - 200 260 ns rr b T = 25 C, I = 28 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -1.7 2.9 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 90386 2 S11-1045-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000