IR MOSFET StrongIRFET IRL60S216 IRL60SL216 HEXFET Power MOSFET Application Brushed Motor drive applications V 60V DSS D BLDC Motor drive applications R typ. 1.6m Battery powered circuits DS(on) Half-bridge and full-bridge topologies max 1.95m G Synchronous rectifier applications I 298A D (Silicon Limited) Resonant mode power supplies S OR-ing and redundant power switches I 195A D (Package Limited) DC/DC and AC/DC converters DC/AC Inverters D D S S Benefits D G Optimized for Logic Level Drive G Improved Gate, Avalanche and Dynamic dV/dt Ruggedness 2 TO-262 D Pak Fully Characterized Capacitance and Avalanche SOA IRL60SL216 IRL60S216 Enhanced body diode dV/dt and dI/dt Capability Lead-Free* RoHS Compliant, Halogen-Free G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRL60SL216 TO-262 Tube 50 IRL60SL216 2 Tape and Reel 800 IRL60S216 IRL60S216 D -Pak 6 315 Limited By Package I = 100A D 270 5 225 4 T = 125C 180 J 3 135 2 90 T = 25C J 1 45 0 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175 T , Case Temperature (C) C V Gate -to -Source Voltage (V) GS, Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage 1 2016-1-19 R , Drain-to -Source On Resistance (m) DS(on) I , Drain Current (A) D IRL60S/SL216 Absolute Maximum Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, VGS 10V (Silicon Limited) 298 D C I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 210 D C GS A I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 195 D C GS I Pulsed Drain Current 780 DM P T = 25C Maximum Power Dissipation 375 W D C Linear Derating Factor 2.5 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 175 C T Storage Temperature Range STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Avalanche Characteristics E Single Pulse Avalanche Energy 530 AS (Thermally limited) mJ E 1045 AS (Thermally limited) Single Pulse Avalanche Energy I Avalanche Current A AR See Fig 15, 16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case R 0.4 JC Case-to-Sink, Flat Greased Surface C/W R 0.50 CS R Junction-to-Ambient 62 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.040 V/C Reference to 25C, I = 2mA V / T (BR)DSS J D 1.6 1.95 V = 10V, I = 100A GS D R Static Drain-to-Source On-Resistance m DS(on) 1.8 2.2 V = 4.5V, I = 50A GS D V Gate Threshold Voltage 1.0 2.4 V V = V , I = 250A GS(th) DS GS D 1.0 V = 60 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V = 60V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 2.0 G Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that Current imitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 0.107mH, R = 50 , I = 100A, V =10V. Jmax J G AS GS I 100A, di/dt 1100A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while VDS is rising from 0 to 80% V . oss oss DSS R is measured at T approximately 90C. J Limited by T , starting T = 25C, L = 1mH, R = 50 , I = 46A, V =10V. Jmax J G AS GS Pulse drain current is limited to 780A by source bonding technology. When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994: