IRL530S, SiHL530S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition V (V) 100 DS Surface Mount R ( )V = 5.0 V 0.16 DS(on) GS Available in Tape and Reel Q (Max.) (nC) 28 Dynamic dV/dt Rating g Repetitive Avalanche Rated Q (nC) 3.8 gs Logic Level Gate Drive Q (nC) 14 gd R Specified at V = 4 V and 5 V DS(on) GS 175 C Operating Temperature Configuration Single Compliant to RoHS Directive 2002/95/EC D DESCRIPTION 2 D PAK (TO-263) Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. G 2 The D PAK (TO-263) is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest D G possible on resistance in any existing surface mount S 2 S package. The D PAK (TO-263) is suitable for high current N-Channel MOSFET applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORDERING INFORMATION 2 Package D PAK (TO-263) a Lead (Pb)-free and Halogen-free SiHL530STRR-GE3 a IRL530STRRPbF Lead (Pb)-free a SiHL530STR-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V 10 GS T = 25 C 15 C Continuous Drain Current V at 5 V I GS D T = 100 C 11 A C a Pulsed Drain Current I 60 DM Linear Derating Factor 0.59 W/C e Linear Derating Factor (PCB Mount) 0.025 b Single Pulse Avalanche Energy E 290 mJ AS a Repetitive Avalanche Current I 15 A AR a Repetitive Avalanche Energy E 8.8 mJ AR Maximum Power Dissipation T = 25 C 88 C P W D e Maximum Power Dissipation (PCB Mount) T = 25 C 3.7 A c Peak Diode Recovery dV/dt dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 1.9 mH, R = 25 , I = 15 A (see fig. 12). DD J g AS c. I 15 A, dI/dt 140 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91342 www.vishay.com S11-1055-Rev. C, 30-May-11 1 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRL530S, SiHL530S Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Maximum Junction-to Ambient (PCB R -40 C/W thJA Maximum Junction-to-Case (Drain) R -1.7 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 100 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.14 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 1.0 - 2.0 V GS(th) DS GS D Gate-Source Leakage I V = 10 V - - 100 nA GSS GS V = 100 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 80 V, V = 0 V, T = 150 C - - 250 DS GS J b V = 5.0 V I = 9.0 A - - 0.16 GS D Drain-Source On-State Resistance R DS(on) b V = 4.0 V I = 7.5 A - - 0.22 GS D b Forward Transconductance g V = 50 V, I = 9.0 A 6.4 - - S fs DS D Dynamic Input Capacitance C -930 - iss V = 0 V, GS Output Capacitance C -2V = 25 V, 50- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -57- rss Total Gate Charge Q -- 28 g I = 15 A, V = 80 V, D DS Gate-Source Charge Q --V = 5.0 V 3.8 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --14 gd Turn-On Delay Time t -4.7 - d(on) Rise Time t -100 - r V = 50 V, I = 15 A, DD D ns b R = 12 , R = 32, see fig. 10 Turn-Off Delay Time t -2g D 2- d(off) Fall Time t -48- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH G package and center Internal Source Inductance L -7.5 - S of die contact S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 15 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 60 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 15 A, V = 0 V -- 2.5 V SD J S GS Body Diode Reverse Recovery Time t - 150 200 ns rr b T = 25 C, I = 15 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.93 1.4 C rr Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91342 2 S11-1055-Rev. C, 30-May-11 This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000