StrongIRFET IRL40B212 IRL40S212 HEXFET Power MOSFET Application Brushed Motor drive applications V 40V DSS BLDC Motor drive applications D Battery powered circuits R typ. 1.5m DS(on) Half-bridge and full-bridge topologies max 1.9m Synchronous rectifier applications G I 254A Resonant mode power supplies D (Silicon Limited) S OR-ing and redundant power switches I 195A D (Package Limited) DC/DC and AC/DC converters DC/AC Inverters D Benefits Optimized for Logic Level Drive S D S Improved Gate, Avalanche and Dynamic dV/dt Ruggedness G G Fully Characterized Capacitance and Avalanche SOA TO-220AB 2 Enhanced body diode dV/dt and dI/dt Capability -Pak D IRL40B212 Lead-Free IRL40S212 RoHS Compliant, Halogen-Free G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRL40B212 TO-220 Tube 50 IRL40B212 2 IRL40S212 D -Pak Tape and Reel 800 IRL40S212 6 300 I = 100A D Limited By Package 5 250 4 200 3 T = 125C 150 J 2 100 1 T = 25C 50 J 0 0 2 4 6 8 10 12 14 16 18 20 25 50 75 100 125 150 175 T , Case Temperature (C) C V Gate -to -Source Voltage (V) GS, Fig 1. Typical On Resistance vs. Gate Voltage Fig 2. Maximum Drain Current vs. Case Temperature 1 www.irf.com 2015 International Rectifier Submit Datasheet Feedback April 27, 2015 R , rai o - urc On es tan e (m D n-t So e R is c ) DS(on) I , Drain Current (A) D IRL40B212/IRL40S212 Absolute Maximum Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 254 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 179 D C GS A I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 195 D C GS I Pulsed Drain Current 990 * DM P T = 25C Maximum Power Dissipation 231 W D C Linear Derating Factor 1.5 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 175 C T Storage Temperature Range STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Avalanche Characteristics E Single Pulse Avalanche Energy 342 AS (Thermally limited) mJ E 790 AS (Thermally limited) Single Pulse Avalanche Energy I Avalanche Current A AR See Fig 15, 16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.65 JC R Case-to-Sink, Flat Greased Surface 0.50 CS C/W R Junction-to-Ambient 62 JA R Junction-to-Ambient (PCB Mount) 40 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 40 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.03 V/C Reference to 25C, I = 2mA D (BR)DSS J 1.5 1.9 V = 10V, I = 100A GS D R Static Drain-to-Source On-Resistance m DS(on) 1.9 2.4 V = 4.5V, I = 50A GS D V Gate Threshold Voltage 1.0 2.4 V V = V , I = 150A GS(th) DS GS D 1.0 V = 40 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V = 40V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 1.6 G Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 0.07mH, R = 50 , I = 100A, V =10V. Jmax J G AS GS I 100A, di/dt 950A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V oss oss DS DSS R is measured at T approximately 90C. J When mounted on 1 inch square PCB (FR-4). Please refer to AN-994 for more details: