IRFZ48 www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Dynamic dV/dt rating TO-220AB Available Repetitive avalanche rated Ultra low on-resistance Available G Very low thermal resistance 175 C operating temperature S Fast switching D G S Ease of paralleling N-Channel MOSFET Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 Note PRODUCT SUMMARY * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For V (V) 60 DS example, parts with lead (Pb) terminations are not RoHS-compliant. R ()V = 10 V 0.018 Please see the information / tables in this datasheet for details DS(on) GS Q (Max.) (nC) 110 g DESCRIPTION Q (nC) 29 gs Third generation power MOSFETs from Vishay provide the Q (nC) 36 gd designer with the best combination of fast switching, Configuration Single ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRFZ48PbF ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 60 DS V 20 Gate-source voltage V GS T = 25 C 50 C Continuous drain current V at 10 V I GS D A T = 100 C 50 C a 290 Pulsed drain current I DM 1.3 W/C Linear derating factor b 100 mJ Single pulse avalanche energy E AS a 50 A Repetitive avalanche current I AR a E 19 mJ Repetitive avalanche energy AR Maximum power dissipation T = 25 C P 190 W C D c Peak diode recovery dV/dt dV/dt 4.5 V/ns - 55 to + 175 Operating junction and storage temperature range T , T J stg C d 300 Soldering recommendations (peak temperature) For 10 s 10 lbf in Mounting torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 25 V, starting T = 25 C, L = 22 H, R = 25 I = 72 A (see fig. 12) DD J g AS c. I 72 A, dI/dt 200 A/s, V V , T 175 C SD DD DS J d. 1.6 mm from case e. Current limited by the package, (die current = 72 A) S21-0340-Rev. C, 12-Apr-2021 Document Number: 91294 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFZ48 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA Case-to-sink, flat, greased surface R 0.50 - C/W thCS Maximum junction-to-case (drain) R -0.80 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 60 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.060 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 -- 100nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 48 V, V = 0 V, T = 150 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 43 A - - 0.018 DS(on) GS D b Forward transconductance g V = 25 V, I = 43 A 27 - - S fs DS D Dynamic Input capacitance C - 2400 - iss V = 0 V, GS Output capacitance C -V = 25 V, 1300- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -190- rss Total gate charge Q - - 110 g I = 72 A, V = 48 V, D DS Gate-source charge Q --V = 10 V 29 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --36 gd Turn-on delay time t -8.1 - d(on) Rise time t -250 - r V = 30 V, I = 72 A, DD D ns b R = 9.1 , R = 0.34 , see fig. 10 g D Turn-off delay time t -210- d(off) Fall time t -250- f D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal source inductance L -7.5 - S S Drain-Source Body Diode Characteristics D MOSFET symbol c Continuous source-drain diode current I -- 50 S showing the A G integral reverse a Pulsed diode forward current I - - 290 SM p - n junction diode S b Body diode voltage V T = 25 C, I = 72 A, V = 0 V -- 2.0 SD J S GS V Body diode reverse recovery time t - 120 180 rr ns b T = 25 C, I = 72 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q - 0.50 0.80 rr C Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % c. Current limited by the package, (die current = 72 A) S21-0340-Rev. C, 12-Apr-2021 Document Number: 91294 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000