PD - 95379A IRFZ44ZPbF IRFZ44ZSPbF Features Advanced Process Technology IRFZ44ZLPbF Ultra Low On-Resistance HEXFET Power MOSFET Dynamic dv/dt Rating 175C Operating Temperature D Fast Switching V = 55V DSS Repetitive Avalanche Allowed up to Tjmax Lead-Free R = 13.9m DS(on) G Description I = 51A D S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. 2 TO-220AB D Pak TO-262 IRFZ44ZPbF IRFZ44ZSPbF IRFZ44ZLPbF Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 51 A D C GS I T = 100C 10V (See Fig. 9) 36 D C Continuous Drain Current, V GS I 200 Pulsed Drain Current DM P T = 25C 80 W C Maximum Power Dissipation D Linear Derating Factor 0.53 W/C V 20 V Gate-to-Source Voltage GS E AS Single Pulse Avalanche Energy (Thermally Limited) 86 mJ E (tested) 105 AS Single Pulse Avalanche Energy Tested Value I AR Avalanche Current See Fig.12a,12b,15,16 A E AR Repetitive Avalanche Energy mJ T -55 to + 175 C J Operating Junction and T STG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting torque, 6-32 or M3 screw 10 lbfin (1.1Nm) Thermal Resistance Parameter Typ. Max. Units R 1.87 C/W JC Junction-to-Case R 0.50 CS Case-to-Sink, Flat, Greased Surface R 62 JA Junction-to-Ambient R 40 JA Junction-to-Ambient (PCB Mount, steady state) HEXFET is a registered trademark of International Rectifier. www.irf.com 1 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage55 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.054 V/C Reference to 25C, I = 1mA DSS J D R DS(on) Static Drain-to-Source On-Resistance 11.1 13.9 V = 10V, I = 31A m GS D V GS(th) Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A DS GS D gfs Forward Transconductance 22 S V = 25V, I = 31A DS D I Drain-to-Source Leakage Current 20 A V = 55V, V = 0V DSS DS GS 250 V = 55V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 200 nA V = 20V GS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 2943nC I = 31A g D Q gs Gate-to-Source Charge 7.2 11 V = 44V DS Q gd Gate-to-Drain Mille) Charge 12 18 V = 10V GS t Turn-On Delay Time 14 ns V = 28V d(on) DD t Rise Time 68 I = 31A r D t d(off) Turn-Off Delay Time 33 R = 15 G t f Fall Time 41 V = 10V GS L Internal Drain Inductance 4.5 nH Between lead, D D 6mm (0.25in.) L G S Internal Source Inductance 7.5 from package and center of die contact S C Input Capacitance 1420 pF = 0V iss V GS C Output Capacitance 240 V = 25V oss DS C rss Reverse Transfer Capacitance 130 = 1.0MHz, See Fig. 5 C oss Output Capacitance 830 V = 0V, V = 1.0V, = 1.0MHz GS DS C oss Output Capacitance 190 V = 0V, V = 44V, = 1.0MHz GS DS C eff. Effective Output Capacitance 300 V = 0V, V = 0V to 44V oss GS DS Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current 51 MOSFET symbol (Body Diode) A showing the G I Pulsed Source Current 200 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage T = 25C, I = 31A, V = 0V SD 1.2 V J S GS t Reverse Recovery Time 23 35 ns T = 25C, I = 31A, V = 28V rr J F DD Q di/dt = 100A/s Reverse Recovery Charge 17 26 nC rr t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) C eff. is a fixed capacitance that gives the same charging time oss Repetitive rating pulse width limited by as C while V is rising from 0 to 80% V . oss DS DSS max. junction temperature. (See fig. 11). Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive Jmax Limited by T , starting T = 25C, L =0.18mH, Jmax J avalanche performance. R = 25 , I = 31A, V =10V. Part not G AS GS This value determined from sample failure population. 100% recommended for use above this value. tested to this value in production. I 31A, di/dt 840A/s, V V , SD DD (BR)DSS 2 This is applied to D Pak, when mounted on 1 square PCB T 175C. J ( FR-4 or G-10 Material ). For recommended footprint and Pulse width 1.0ms duty cycle 2%. soldering techniques refer to application note AN-994. R is rated at T of approximately 90C. J 2 www.irf.com