IRFZ24, SiHFZ24 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating V (V) 60 DS 175 C operating temperature R ( )V = 10 V 0.10 DS(on) GS Fast switching Q max. (nC) 25 g Q (nC) 5.8 Ease of paralleling gs Q (nC) 11 gd Simple drive requirements Configuration Single Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 D DESCRIPTION TO-220AB Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all S S commercial-industrial applications at power dissipation D G levels to approximately 50 W. The low thermal resistance N-Channel MOSFET and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB Lead (Pb)-free IRFZ24PbF ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 60 DS V Gate-Source Voltage V 20 GS T = 25 C 17 C Continuous Drain Current V at 10 V I GS D T = 100 C 12 A C a Pulsed Drain Current I 68 DM Linear Derating Factor 0.40 W/C b Single Pulse Avalanche Energy E 100 mJ AS Maximum Power Dissipation T = 25 C P 60 W C D c Peak Diode Recovery dV/dt dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range T , T -55 to +175 J stg C d Soldering Recommendations (Peak temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 403 H, R = 25 , I = 17 A (see fig. 12). DD J g AS c. I 17 A, dI/dt 140 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. S16-0013-Rev. C, 18-Jan-16 Document Number: 91406 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFZ24, SiHFZ24 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -2.5 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 60 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.061 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 48 V, V = 0 V, T = 150 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 10 A - - 0.10 DS(on) GS D Forward Transconductance g V = 25 V, I = 10 A 5.5 - - S fs DS D Dynamic Input Capacitance C - 640 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 360- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -79- rss Total Gate Charge Q -- 25 g I = 17 A, V = 48 V, D DS Gate-Source Charge Q --V = 10 V 5.8 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --11 gd Turn-On Delay Time t -13 - d(on) Rise Time t -58 - r V = 30 V, I = 17 A, DD D ns b R = 18 , R = 1.7 , see fig. 10 Turn-Off Delay Time t -2g D 5- d(off) Fall Time t -42- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal Source Inductance L -7.5 - S S Drain-Source Body Diode Characteristics D MOSFET symbol Continuous Source-Drain Diode Current I -- 17 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 68 SM S p - n junction diode b Body Diode Voltage V T = 25 C, I = 17 A, V = 0 V -- 1.5 V SD J S GS Body Diode Reverse Recovery Time t - 88 180 ns rr T = 25 C, I = 17 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -0.29 0.64 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S16-0013-Rev. C, 18-Jan-16 Document Number: 91406 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000