IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 www.vishay.com Vishay Siliconix Power MOSFET FEATURES S Dynamic dV/dt rating DPAK IPAK Repetitive avalanche rated (TO-252) (TO-251) Surface-mount (IRFR9220, SiHFR9220) G D D Straight lead (IRFUFU9220, SiHFU9220) Available Available in tape and reel S P-channel G S D G Fast switching D Material categorization: for definitions of compliance P-Channel MOSFET please see www.vishay.com/doc 99912 PRODUCT SUMMARY DESCRIPTION V (V) -200 Third power MOSFETs technology is the key to Vishay DS advanced line of Power MOSFET transistors. The efficient R ()V = -10 V 1.5 DS(on) GS geometry and unique processing of the Power MOSFETs Q (Max.) (nC) 20 g design achieve very low on-state resistance combined with Q (nC) 3.3 gs high transconductance and extreme device ruggedness. Q (nC) 11 gd The DPAK is designed for surface mounting using vapor Configuration Single phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) a a a SiHFR9220-GE3 SiHFR9220TRL-GE3 SiHFR9220TRR-GE3 SiHFR9220TR-GE3 SiHFU9220-GE3 Lead (Pb)-free and halogen-free IRFR9220PbF-BE3 IRFR9220TRPbF-BE3 - - - a a a Lead (Pb)-free IRFR9220PbF IRFR9220TRLPbF IRFR9220TRRPbF IRFR9220TRPbF IRFU9220PbF Note a. See device orientation ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V -200 DS V Gate-source voltage V 20 GS T = 25 C -3.6 C Continuous drain current V at -10 V I GS D T = 100 C -2.3 A C a Pulsed drain current I -14 DM Linear derating factor 0.33 W/C e Linear derating factor (PCB mount) 0.020 b Single pulse avalanche energy E 310 mJ AS a Repetitive avalanche current I -3.6 A AR a Repetitive avalanche energy E 4.2 mJ AR Maximum power dissipation T = 25 C 42 C P W D e Maximum power dissipation (PCB mount) T = 25 C 2.5 A c Peak diode recovery dV/dt dV/dt -5.0 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = - 50 V, Starting T = 25 C, L = 35 mH, R = 25 , I = - 3.6 A (see fig. 12) DD J g AS c. I - 3.9 A, dI/dt 95 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S21-0373-Rev. F, 19-Apr-2021 Document Number: 91283 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum junction-to-ambient R -- 110 thJA Maximum junction-to-ambient R -- 50 C/W thJA a (PCB mount) Maximum junction-to-case (drain) R -- 3.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = - 250 A - 200 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = - 1 mA - - 0.22 - V/C DS DS J D Gate-source threshold voltage V V = V , I = - 250 A - 2.0 - - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = - 200 V, V = 0 V - - - 100 DS GS Zero gate voltage drain current I A DSS V = - 160 V, V = 0 V, T = 125 C - - - 500 DS GS J b Drain-source on-state resistance R V = - 10 V I = - 2.2 A -- 1.5 DS(on) GS D Forward transconductance g V = - 50 V, I = - 2.2 A 1.1 - - S fs DS D Dynamic Input capacitance C - 340 - iss V = 0 V, GS Output capacitance C -V = - 25 V, 110- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -33- rss Total gate charge Q -- 20 g I = - 3.9 A, V = - 160 V, D DS Gate-source charge Q --V = - 10 V 3.3 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --11 gd Turn-on delay time t -8.8 - d(on) Rise time t -27 - r V = - 100 V, I = - 3.9 A, DD D ns b R = 18 , R = 24 , see fig. 10 g D Turn-off delay time t -7.3- d(off) Fall time t -19- f D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal source inductance L die contact -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- - 3.6 S showing the A integral reverse G a I -- - 14 Pulsed diode forward current SM p - n junction diode S b Body diode voltage V T = 25 C, I = - 3.6 A, V = 0 V -- - 6.3 V SD J S GS Body diode reverse recovery time t - 150 300 ns rr b T = 25 C, I = - 3.9 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -0.97 2.0 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0373-Rev. F, 19-Apr-2021 Document Number: 91283 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000