IRFZ10, SiHFZ10 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 60 DS Available 175 C Operating Temperature R ( )V = 10 V 0.20 DS(on) GS RoHS* Fast Switching COMPLIANT Q (Max.) (nC) 11 g Ease of Paralleling Q (nC) 3.1 gs Simple Drive Requirements Q (nC) 5.8 gd Compliant to RoHS Directive 2002/95/EC Configuration Single DESCRIPTION D Third Generation Power MOSFETs from Vishay provides the TO-220AB designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. G The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation S D levels to approximately 50 W. The low thermal resistance S G and low package cost of the TO-220AB contribute to its N-Channel MOSFET wide acceptance throughout the industry. ORDERING INFORMATION Package TO-220AB IRFZ10PbF Lead (Pb)-free SiHFZ10-E3 IRFZ10 SnPb SiHFZ10 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 60 DS V Gate-Source Voltage V 20 GS T = 25 C 10 C Continuous Drain Current V at 10 V I GS D T = 100 C 7.2 A C a Pulsed Drain Current I 40 DM Linear Derating Factor 0.29 W/C b Single Pulse Avalanche Energy E 47 mJ AS Maximum Power Dissipation T = 25 C P 43 W C D c Peak Diode Recovery dV/dt dV/dt 4.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 175 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 10 lbf in Mounting Torque 6-32 or M3 screw 1.1 N m Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 1.8 mH, R = 25 , I = 7.2 A (see fig. 12). DD J g AS c. I 10 A, dI/dt 90 A/s, V V , T 175 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 90363 www.vishay.com S11-0511-Rev. C, 21-Mar-11 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFZ10, SiHFZ10 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -3.5 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 60 - - DS GS D V V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.063 - DS DS J D V/C Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - GS(th) DS GS D 4.0 V Gate-Source Leakage I V = 20 -- 100 nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 48 V, V = 0 V, T = 150 C - - DS GS J 250 b Drain-Source On-State Resistance R V = 10 V I = 6.0 A -- 0.20 DS(on) GS D b Forward Transconductance g V = 25 V, I = 6.0 A 2.4 - - fs DS D S Dynamic V = 0 V Input Capacitance C - 300 - GS iss Output Capacitance C -V = 25 V 160- pF oss DS Reverse Transfer Capacitance C -29- f = 1.0 MHz, see fig. 5 rss Total Gate Charge Q -- 11 g I = 10 A, V = 48 V, D DS Gate-Source Charge Q --V = 10 V 3.1 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --5.8 gd Turn-On Delay Time t -10 - d(on) Rise Time t -50 - r V = 30 V, I = 10 A DD D ns Turn-Off Delay Time t -13- d(off) b R = 24 , R = 2.7, see fig. 10 g D Fall Time t -19- f Between lead, D Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH G package and center of Internal Source Inductance L -7.5 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 10 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 40 SM S p - n junction diode b Body Diode Voltage V -- SD T = 25 C, I = 10 A, V = 0 V 1.6 V J S GS Body Diode Reverse Recovery Time t - rr 70 140 ns b T = 25 C, I = 10 A, di/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - rr 0.20 0.40 C Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 90363 2 S11-0511-Rev. C, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000