IRFR9010, IRFU9010, SiHFR9010, SiHFU9010 www.vishay.com Vishay Siliconix Power MOSFET FEATURES S Dynamic dV/dt rating DPAK IPAK Repetitive avalanche ratings (TO-252) (TO-251) Surface-mount (IRFR9010, SiHFR9010) G D Straight lead (IRFU9010, SiHFU9010) D Simple drive requirements Available Ease of paralleling Material categorization: for definitions of S G S D compliance please see www.vishay.com/doc 99912 G D DESCRIPTION P-Channel MOSFET The power MOSFET technology is the key to Vishays advanced line of power MOSFET transistors. The efficien t PRODUCT SUMMARY geometry and unique processing of this latest State of the Art design achieves: very low on-state resistance V (V) -50 DS combined with high transconductance superior reverse R ()V = -10 V 0.50 DS(on) GS energy and diode recovery dV/dt capability. Q (Max.) (nC) 9.1 The power MOSFET transistors also feature all of the well g established advantages of MOSFETs such as voltage Q (nC) 3.0 gs control, very fast switching, ease of paralleling and Q (nC) 5.9 gd temperature stability of the electrical parameters. Configuration Single Surface mount packages enhance circuit performance by reducing stray inductances and capacitance. The DPAK (TO-252) surface-mount package brings the advantages of power MOSFETs to high volume applications where PC Board surface mounting is desirable. The surface mount option IRFR9010, SiHFR9010 is provided on 16 mm tape. The straight lead option IRFU9010, SiHFU9010 of the device is called the IPAK (TO-251). They are well suited for applications where limited heat dissipation is required such as, computers and peripherals, telecommunication equipment, DC/DC converters, and a wide range of consumer products. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) a a Lead (Pb)-free and halogen-free SiHFR9010-GE3 SiHFR9010TR-GE3 SiHFR9010TRL-GE3 SiHFU9010-GE3 a a Lead (Pb)-free IRFR9010PbF IRFR9010TRPbF IRFR9010TRLPbF IRFU9010PbF Note a. See device orientation ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V -50 DS V Gate-source voltage V 20 GS T = 25 C -5.3 C Continuous drain current V at -10 V I GS D T = 100 C -3.3 A C a Pulsed drain current I -21 DM Linear derating factor 0.20 W/C b Single pulse avalanche energy E 136 mJ AS Drain-source voltage I -5.3 A AR Maximum power dissipation T = 25 C E 2.5 mJ C AR e Maximum power dissipation (PCB mount) T = 25 C P 25 W A D c Peak diode recovery dV/dt dV/dt 5.8 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 14) b. V = - 25 V, starting T = 25 C, L = 9.7 mH, R = 25 , peak I = - 5.3 A DD J g L c. I - 5.3 A, dI/dt - 80 A/s, V 40 V, T 150 C, suggested R = 24 SD DD J g d. 0.063 (1.6 mm) from case S21-0373-Rev. E, 19-Apr-2021 Document Number: 91378 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFR9010, IRFU9010, SiHFR9010, SiHFU9010 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum junction-to-ambient R -- 110 thJA Case-to-sink R -1.7 - C/W thCS a Maximum junction-to-case (drain) R -- 5.0 thJC Note a. Mounting pad must cover heatsink surface area SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = - 250 A - 50 - - V DS GS D Gate-source threshold voltage V V = V , I = - 250 A - 2.0 - - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 500 nA GSS GS V = max. rating, V = 0 V - - - 250 DS GS Zero gate voltage drain current I A DSS V = 0.8 x max. rating, V = 0 V, T = 125 - - - 1000 DS GS J b Drain-source on-state resistance R V = - 10 V I = - 2.8 A - 0.35 0.5 DS(on) GS D Forward transconductance g V - 50 V, I = - 2.8 A 1.1 1.7 - S fs DS DS Dynamic Input capacitance C - 240 - iss V = 0 V, GS Output capacitance C -V = - 25 V, 160- pF oss DS f = 1.0 MHz, see fig. 9 Reverse transfer capacitance C -30- rss Total gate charge Q I = - 4.7 A, V = 0.8 x max. -6.1 9.1 g D DS rating, see fig. 16 Gate-source charge Q -2V = - 10 V .03.0 nC gs GS (Independent operating temperature) Gate-drain charge Q -3.95.9 gd Turn-on delay time t -6.1 9.2 d(on) V = - 25 V, I = - 4.7 A, Rise time t DD D -47 71 r R = 24 , R = 5.6 , see fig. 15 ns g D Turn-off delay time t -1320 d(off) (Independent operating temperature) Fall time t -3559 f D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact. Internal source inductance L -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- - 5.3 S showing the A G integral reverse a Pulsed diode forward current I -- - 18 SM p - n junction diode S b Body diode voltage V T = 25 C, I = - 5.3 A, V = 0 V -- - 5.5 V SD J S GS Body diode reverse recovery time t 33 75 160 ns rr b T = 25 C, I = - 4,7 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q 0.090 0.22 0.52 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 14) b. Pulse width 300 s duty cycle 2 % S21-0373-Rev. E, 19-Apr-2021 Document Number: 91378 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000