PD - 95550A IRFR4105PbF IRFU4105PbF Ultra Low On-Resistance HEXFET Power MOSFET Surface Mount (IRFR4105) Straight Lead (IRFU4105) D V = 55V Fast Switching DSS Fully Avalanche Rated Lead-Free R = 0.045 DS(on) G Description Fifth Generation HEXFETs from International Rectifier I = 27A D S utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. D-PAK I-PAK The straight lead version (IRFU series) is for through- TO-252AA TO-251AA hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 27 D C GS I T = 100C Continuous Drain Current, V 10V 19 A D C GS I Pulsed Drain Current 100 DM P T = 25C Power Dissipation 68 W D C Linear Derating Factor 0.45 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 65 mJ AS I Avalanche Current 16 A AR E Repetitive Avalanche Energy 6.8 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range STG C Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 2.2 JC R Junction-to-Ambient (PCB mount) ** 50 C/W JA R Junction-to-Ambient 110 JA www.irf.com 1 IRFR/U4105PbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.052 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 0.045 V = 10V, I = 16A GS D DS(on) V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 6.5 S V = 25V, I = 16A fs DS D 25 V = 55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 44V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS nA Gate-to-Source Reverse Leakage -100 V = -20V GS Q Total Gate Charge 34 I = 16A g D Q Gate-to-Source Charge 6.8 nC V = 44V gs DS Q Gate-to-Drain Mille) Charge 14 V = 10V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 7.0 V = 28V d(on) DD t Rise Time 49 I = 16A r D ns t Turn-Off Delay Time 31 R = 18 d(off) G t Fall Time 40 R = 1.8, See Fig. 10 f D D Between lead, L Internal Drain Inductance 4.5 nH D 6mm (0.25in.) G from package L Internal Source Inductance 7.5 S and center of die contact S C Input Capacitance 700 V = 0V iss GS C Output Capacitance 240 pF V = 25V oss DS C Reverse Transfer Capacitance 100 = 1.0MHz, See Fig. 5 rss Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 27 (Body Diode) showing the A G I Pulsed Source Current integral reverse SM 100 (Body Diode) p-n junction diode. S V Diode Forward Voltage 1.6 V T = 25C, I = 16A, V = 0V SD J S GS t Reverse Recovery Time 57 86 ns T = 25C, I = 16A rr J F Q Reverse RecoveryCharge 130 200 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by Pulse width 300s duty cycle 2% max. junction temperature. ( See fig. 11 ) Calculated continuous current based on maximum allowable junction V = 25V, starting T = 25C, L = 410H DD J temperature Package limitation current = 20A R = 25, I = 16A. (See Figure 12) G AS This is applied for I-PAK, Ls of D-PAK is measured between lead and I 16A, di/dt 420A/s, V V , SD DD (BR)DSS center of die contact T 175C J Uses IRFZ34N data and test conditions ** When mounted on 1 square PCB (FR-4 or G-10 Material ) . For recommended footprint and soldering techniques refer to application note AN-994 2 www.irf.com