X-On Electronics has gained recognition as a prominent supplier of IRFU3806PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFU3806PBF MOSFETs are a product manufactured by Infineon. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFU3806PBF Infineon

IRFU3806PBF electronic component of Infineon
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Part No.IRFU3806PBF
Manufacturer: Infineon
Category: MOSFETs
Description: MOSFET MOSFT 60V 43A 16.2mOhm 22nC Qg
Datasheet: IRFU3806PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.8213
10 : USD 0.81
125 : USD 0.7137
750 : USD 0.5494
1500 : USD 0.5155
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.8723
10 : USD 0.7515
100 : USD 0.5771
500 : USD 0.51
1000 : USD 0.4108
2500 : USD 0.4108
10000 : USD 0.4036
25000 : USD 0.3781
50000 : USD 0.372
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 0.7515
3 : USD 0.6435
4 : USD 0.6037
10 : USD 0.5777
N/A

Obsolete
0
MOQ : 62
Multiples : 1
62 : USD 0.5276
100 : USD 0.4988
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Configuration
Height
Length
Transistor Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the IRFU3806PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFU3806PBF and other electronic components in the MOSFETs category and beyond.

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IRFR3806PbF IRFU3806PbF Applications High Efficiency Synchronous Rectification in SMPS HEXFET Power MOSFET Uninterruptible Power Supply High Speed Power Switching D V 60V DSS Hard Switched and High Frequency Circuits R typ. 12.6m DS(on) G max. 15.8m Benefits I 43A S D Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability D-Pak I-Pak IRFR3806PbF IRFU3806PbF GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, VGS 10V 43 D C I T = 100C Continuous Drain Current, V 10V 31 A D C GS I 170 DM Pulsed Drain Current P T = 25C Maximum Power Dissipation 71 W D C 0.47 Linear Derating Factor W/C V 20 V GS Gate-to-Source Voltage Peak Diode Recovery 24 dv/dt V/ns T -55 to + 175 C J Operating Junction and T STG Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case) Avalanche Characteristics Single Pulse Avalanche Energy E 73 mJ AS (Thermally limited) Avalanche Current I 25 A AR Repetitive Avalanche Energy E 7.1 mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 2.12 JC R 0.50 C/W CS Case-to-Sink, Flat Greased Surface R 62 Junction-to-Ambient JA www.irf.com 1 03/04/08 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250A (BR)DSS GS D V / T Breakdown Voltage Temp. Coefficient 0.075 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 12.6 15.8 V = 10V, I = 25A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 50A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 60V, V = 0V DSS DS GS 250 V = 48V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 41 S V = 10V, I = 25A DS D Q Total Gate Charge 22 30 nC I = 25A g D Q Gate-to-Source Charge 5.0 V = 30V gs DS Q Gate-to-Drain Mille) Charge 6.3 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 28.3 I = 25A, V =0V, V = 10V sync g gd D DS GS R Internal Gate Resistance 0.79 G(int) t Turn-On Delay Time 6.3 ns V = 39V d(on) DD t Rise Time 40 I = 25A r D t Turn-Off Delay Time 49 R = 20 d(off) G t Fall Time 47 V = 10V f GS C Input Capacitance 1150 V = 0V iss GS C Output Capacitance 130 V = 50V oss DS C Reverse Transfer Capacitance 67 pF = 1.0MHz rss C eff. (ER) 190 V = 0V, V = 0V to 60V oss Effective Output Capacitance (Energy Related) GS DS C eff. (TR) 230 V = 0V, V = 0V to 60V Effective Output Capacitance (Time Related) oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I Continuous Source Current A MOSFET symbol D 43 S (Body Diode) showing the G I Pulsed Source Current 170 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 25A, V = 0V SD J S GS t T = 25C V = 51V, Reverse Recovery Time 22 33 ns rr J R 26 39 T = 125C I = 25A J F di/dt = 100A/s Q T = 25C Reverse Recovery Charge 17 26 nC rr J T = 125C 24 36 J I Reverse Recovery Current 1.4 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Repetitive rating pulse width limited by max. junction C eff. (TR) is a fixed capacitance that gives the same charging time oss temperature. as C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.23mH Jmax J C eff. (ER) is a fixed capacitance that gives the same energy as oss R = 25 , I = 25A, V =10V. Part not recommended for GS G AS C while V is rising from 0 to 80% V . oss DS DSS use above this value. When mounted on 1 square PCB (FR-4 or G-10 Material). For recom I 25A, di/dt 1580A/s, V V , T 175C. mended footprint and soldering techniques refer to application note AN-994. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. R is measured at T approximately 90C. J 2 www.irf.com

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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