IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface Mountable (Order As IRFR9020, V (V) - 50 SiHFR9020) DS Straight Lead Option (Order As IRFU9020, R ( )V = - 10 V 0.28 DS(on) GS SiHFU9020) Q (Max.) (nC) 14 g Repetitive Avalanche Ratings Q (nC) 6.5 Dynamic dV/dt Rating gs Simple Drive Requirements Q (nC) 6.5 gd Ease of Paralleling Configuration Single Material categorization: For definitions of compliance please see www.vishay.com/doc 99912 S DESCRIPTION The power MOSFET technology is the key to Vishays DPAK IPAK advanced line of power MOSFET transistors. The efficient (TO-252) (TO-251) G geometry and unique processing of this latest State of the D D Art design achieves: very low on-state resistance combined with high transconductance superior reverse energy and diode recovery dV/dt. S The power MOSFET transistors also feature all of the well G S D established advantages of MOSFETS such as voltage G D control, very fast switching, ease of paralleling and temperature stability of the electrical parameters. P-Channel MOSFET Surface mount packages enhance circuit performance by reducing stray inductances and capacitance. The TO-252 surface mount package brings the advantages of power MOSFETs to high volume applications where PC board surface mounting is desirable. The surface mount option IRFR9020, SiHFR9020 is provided on 16mm tape. The straight lead option IRFU9020, SiHFU9020 of the device is called the IPAK (TO-251). They are well suited for applications where limited heat dissipation is required such as, computers and peripherals, telecommunication equipment, DC/DC converters, and a wide range of consumer products. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) a a Lead (Pb)-free and Halogen-free SiHFR9020-GE3 SiHFR9020TR-GE3 SiHFR9020TRL-GE3 SiHFU9020-GE3 a a IRFR9020PbF IRFR9020TRPbF IRFR9020TRLPbF IRFU9020PbF Lead (Pb)-free a a SiHFR9020-E3 SiHFR9020T-E3 SiHFR9020TL-E3 SiHFU9020-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V - 50 DS V Gate-Source Voltage V 20 GS T = 25 C - 9.9 C Continuous Drain Current V at - 10 V I GS D T = 100 C - 6.3 A C a Pulsed Drain Current I - 40 DM Linear Derating Factor 0.33 W/C b Single Pulse Avalanche Energy E 250 mJ AS a Repetitive Avalanche Current I - 9.9 A AR a Repetitive Avalanche Energy E 4.2 mJ AR Maximum Power Dissipation T = 25 C P 42 W C D c Peak Diode Recovery dV/dt dV/dt 5.8 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 16). b. V = - 25 V, Starting T = 25 C, L = 5.1 mH, R = 25 , Peak I = - 9.9 A DD J g L c. I - 9.9 A, dI/dt -120 A/s, V 40 V, T 150 C. SD DD J d. 0.063 (1.6 mm) from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). S13-0169-Rev. D, 04-Feb-13 Document Number: 90350 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFR9020, IRFU9020, SiHFR9020, SiHFU9020 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum Junction-to-Ambient R - - 110 thJA Case-to-Sink R -1.7 - C/W thCS Maximum Junction-to-Case (Drain) R -- 3.0 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = - 250 A - 50 - - V DS GS D Gate-Source Threshold Voltage V V = V , I = - 250 A - 2.0 - - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 500 nA GSS GS V = max. rating, V = 0 V - - 250 DS GS Zero Gate Voltage Drain Current I A DSS V = 0.8 x max. rating, V = 0 V, T = 125 C - - 1000 DS GS J b Drain-Source On-State Resistance R V = - 10 V I = 5.7 A - 0.20 0.28 DS(on) GS D Forward Transconductance g V - 50 V, I = - 5.7 A 2.3 3.5 - S fs DS DS Dynamic Input Capacitance C -490 - iss V = 0 V, GS Output Capacitance C -3V = - 25 V, 20- pF oss DS f = 1.0 MHz, see fig. 9 Reverse Transfer Capacitance C -70- rss Total Gate Charge Q I = - 9.7 A, V = 0.8 x max. -9.4 14 g D DS rating, see fig. 18 Gate-Source Charge Q -4.36.5 gs V = - 10 V nC GS (Independent operating Gate-Drain Charge Q -4.36.5 temperature) gd Turn-On Delay Time t -8.2 12 d(on) V = - 25 V, I = - 9.7 A, DD D Rise Time t -57 66 r R = 18 , R = 2.4 , see fig. 17 ns g D Turn-Off Delay Time t -1218 d(off) (Independent operating temperature) Fall Time t -2538 f D Internal Drain Inductance L Between lead, -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L -7.5 - S die contact. S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- - 9.9 S showing the A integral reverse G a Pulsed Diode Forward Current I -- - 40 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = - 9.9 A, V = 0 V -- - 6.3 V SD J S GS Body Diode Reverse Recovery Time t 56 110 280 ns rr b T = 25 C, I = - 9,7 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q 0.17 0.34 0.85 nC rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 16). b. Pulse width 300 s duty cycle 2 %. S13-0169-Rev. D, 04-Feb-13 Document Number: 90350 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000