IRFW630B N-Channel MOSFET November 2013 IRFW630B N-Channel MOSFET 200 V, 9 A, 400 m Description Features 9.0 A, 200 V, R = 400 m (Max.) V = 10 V, These N-Channel enhancement mode power field effect DS(on) GS transistors are produced using Fairchilds proprietary, I = 4.5 A D planar, DMOS technology.This advanced technology Low Gate Charge (Typ. 22 nC) has been especially tailored to minimize on-state resistance, provide superior switching performance, and Low C (Typ. 22 pF) rss withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for 100% Avalanche Tested high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. D D G G 2 S D -PAK S Absolute Maximum Ratings T = 25C unless otherwise noted. C Symbol Parameter IRFW630BTM FP001 Unit 200 V Drain-Source Voltage V DSS I Drain Current - Continuous (T = 25C) 9.0 A D C - Continuous (T = 100C) A C 5.7 I Drain Current - Pulsed (Note 1) 36 A DM V Gate-Source voltage 30 V GSS (Note 2) E Single Pulsed Avalanche Energy 160 mJ AS (Note 1) I Avalanche Current 9.0 A AR (Note 1) E Repetitive Avalanche Energy 7.2 mJ AR (Note 3) dv/dt Peak Diode Recovery dv/dt 5.5 V/ns P Power Dissipation (T = 25C)* 3.13 W D A 72 W Power Dissipation (T = 25C) C - Derate above 25C 0.57 W/C T T Operating and Storage Temperature Range -55 to +150 C J, STG T Maximum Lead Temperature for Soldering Purpose, L 300 C 1/8 from Case for 5 Seconds Thermal Characteristics Symbol Parameter IRFW630BTM FP001 Unit R Thermal Resistance, Junction to Case, Max. 1.74 JC o Thermal Resistance, Junction to Ambient ( Min. Pad of 2 -oz Copper), Max. 62.5 C/W R JA 2 Thermal Resistance, Junction to Ambient ( *1 in Pad of 2 -oz Copper), Max. 40 200 2 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 IRFW630B Rev. C1IRFW630B N-Channel MOSFET Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity 2 IRFW630B D -PAK 330 mm 24 mm 800 units IRFW630BTM FP001 Electrical Characteristics T = 25C unless otherwise noted. C Symbol Parameter Conditions Min Typ Max Unit Off Characteristics BV Drain-Source Breakdown Voltage V = 0 V, I = 250 A 200 -- -- V DSS GS D BV Breakdown Voltage Temperature DSS I = 250 A, Referenced to 25C -- 0.2 -- V / C D / T Coefficient J I Zero Gate Voltage Drain Current V = 200 V, V = 0 V -- -- 10 A DSS DS GS V = 160 V, T = 125C -- -- 100 A DS C I Gate-Body Leakage Current, Forward V = 30 V, V = 0 V -- -- 100 nA GSSF GS DS I Gate-Body Leakage Current, Reverse V = -30 V, V = 0 V -- -- -100 nA GSSR GS DS On Characteristics V Gate Threshold Voltage V = V , I = 250 A 2.0 -- 4.0 V GS(th) DS GS D R Static Drain-Source DS(on) V = 10 V, I = 4.5 A -- 0.34 0.4 GS D On-Resistance g Forward Transconductance V = 40 V, I = 4.5 A -- 7.05 -- S FS DS D Dynamic Characteristics C Input Capacitance -- 550 720 pF iss V = 25 V, V = 0 V, DS GS f = 1.0 MHz C Output Capacitance -- 85 110 pF oss C Reverse Transfer Capacitance -- 22 29 pF rss Switching Characteristics t Turn-On Delay Time -- 11 30 ns V = 100 V, I = 9.0 A d(on) DD D R = 25 t Turn-On Rise Time G -- 70 150 ns r t Turn-Off Delay Time -- 60 130 ns d(off) (Note 4) t Turn-Off Fall Time -- 65 140 ns f Q Total Gate Charge -- 22 29 nC g V = 160 V, I = 9.0 A DS D V = 10 V Q Gate-Source Charge GS -- 3.6 -- nC gs Q Gate-Drain Charge (Note 4) -- 10.2 -- nC gd Drain-Source Diode Characteristics and Maximum Ratings I Maximum Continuous Drain-Source Diode Forward Current -- -- 9.0 A S I Maximum Pulsed Drain-Source Diode Forward Current -- -- 36 A SM V Drain-Source Diode Forward Voltage V = 0 V, I = 9.0 A -- -- 1.5 V SD GS S V = 0 V, I = 9.0 A t Reverse Recovery Time -- 140 -- ns GS S rr dI /dt =100 A/s F Q Reverse Recovery Charge -- 0.87 -- C rr Notes: 1. Repetitive rating: pulse-width limited by maximum junction temperature . 2. L = 3 mH, I = 9.0 A, V = 50 V, R = 25 , starting T = 25C . AS DD G J 3. I 9.0 A, di/dt 300 A/s, V BV starting T = 25C. SD DD DSS, J 4. Essentially independent of operating temperature . 200 2 Fairchild Semiconductor Corporation www.fairchildsemi.com 2 IRFW630B Rev. C1