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This literature is subject to all applicable copyright laws and is not for resale in any manner.IRL640A N-Channel Logic Level A-FET December 2013 IRL640A N-Channel Logic Level A-FET 200 V, 18 A, 180 m Description Features These N-Channel enhancement mode power field 18 A, 200 V, R = 180 m V = 5 V DS(on) GS Low Gate Charge (Typ. 40 nC) effect transistors are produced using Fairchilds proprietary, planar, DMOS technology. This advanced Low Crss (Typ. 95 pF) technology has been especially tailored to minimize Fast Switching on-state resistance, provide superior switching 100% Avalanche Tested performance, and withstand high energy pulse in the Improved dv/dt Capability avalanche and commutation mode. These devices Logic-Level Gate Drive are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control. D G G D S TO-220 S Absolute Maximum Ratings Symbol Characteristic Value Units V Drain-to-Source Voltage 200 V DSS Continuous Drain Current (T =25C) 18 C I A D Continuous Drain Current (T =100C) 11.4 C I Drain Current-Pulsed (1) 63 A DM V Gate-to-Source Voltage 20 V GS E Single Pulsed Avalanche Energy (2) 64 mJ AS I (1) Avalanche Current 18 A AR E Repetitive Avalanche Energy (1) 11 mJ AR dv/dt (3) Peak Diode Recovery dv/dt 5 V/ns Total Power Dissipation (T =25C) 110 W C P D Linear Derating Factor 0.88 W/C Operating Junction and T , T - 55 to +150 J STG Storage Temperature Range C Maximum Lead Temp. for Soldering T 300 L Purposes, 1/8 from case for 5-seconds Thermal Resistance Symbol Characteristic Typ. Max. Units R Junction-to-Case -- 1.14 JC R Case-to-Sink 0.5 -- CS C/W R Junction-to-Ambient JA -- 62.5 1999 Fairchild Semiconductor Corporation www.fairchildsemi.com 1 IRL640A Rev. C0