PD-91292D IRFY440C, IRFY440CM POWER MOSFET 500V, N-CHANNEL THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY440C 0.85 7.0A Ceramic IRFY440CM 0.85 7.0A Ceramic HEXFET MOSFET technology is the key to International Rectifiers advanced line of power MOSFET transistors. TO-257AA The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET Features: transistors also feature all of the well-established advantages of MOSFETs, such as voltage control, very fast switching, Simple Drive Requirements Ease of Paralleling ease of paralleling and electrical parameter temperature stability. They are well-suited for applications such as Hermetically Sealed switching power supplies, motor controls, inverters, Electrically Isolated choppers, audio amplifiers, high energy pulse circuits, and Ceramic Eyelets virtually any application where high reliability is required. Ideally Suited For Space Level The HEXFET transistors totally isolated package eliminates Applications the need for additional isolating material between the device and the heatsink.This improves thermal efficiency and reduces drain capacitance. Absolute Maximum Ratings Parameter Units I V = 10V, T = 25C Continuous Drain Current 7.0 D GS C A I V = 10V, T = 100C Continuous Drain Current 4.4 D GS C I Pulsed Drain Current 28 DM P T = 25C Max. Power Dissipation 100 W D C Linear Derating Factor 0.8 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 510 mJ AS I Avalanche Current 7.0 A AR E Repetitive Avalanche Energy 10 mJ AR dv/dt Peak Diode Recovery dv/dt 3.5 V/ns T Operating Junction -55 to 150 J o T Storage Temperature Range C STG Lead Temperature 300(0.063in./1.6mm from case for 10 sec) Weight 4.3 (Typical) g For footnotes refer to the last page www.irf.com 1 IRFY440C, IRFY440CM Electrical Characteristics Tj = 25C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions BV Drain-to-Source Breakdown Voltage 500 V V = 0V, I = 1.0mA DSS GS D BV /T Temperature Coefficient of Breakdown 0.78 V/C Reference to 25C, I = 1.0mA DSS J D Voltage R Static Drain-to-Source On-State 0.85 V = 10V, I = 4.4A DS(on) GS D Resistance V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 4.7 S ( )V > 15V, I = 4.4A fs DS DS I Zero Gate Voltage Drain Current 25 V = 400V ,V =0V DSS DS GS A 250 V = 400V, DS V = 0V, T = 125C GS J I Gate-to-Source Leakage Forward 100 V = 20V GSS GS nA I Gate-to-Source Leakage Reverse -100 V = -20V GSS GS Q Total Gate Charge 68.5 V =10V, I = 7.0A g GS D Q Gate-to-Source Charge 12.5 nC V = 250V gs DS Q Gate-to-Drain (Miller) Charge 42.4 gd t Turn-On Delay Time 21 V = 250V, I = 7.0A, d(on) DD D t Rise Time 73 V =10V, R = r GS G ns t Turn-Off Delay Time 72 d(off) t Fall Time 51 f Measured from drain lead (6mm/0.25in. from L + L Total Inductance 6.8 S D nH package) to source lead (6mm/0.25in. from package ) C Input Capacitance 1300 V = 0V, V = 25V iss GS DS C Output Capacitance 310 pF f = 1.0MHz oss C Reverse Transfer Capacitance 120 rss Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units Test Conditions I Continuous Source Current (Body Diode) 7.0 S A I Pulse Source Current (Body Diode) 28 SM V Diode Forward Voltage 1.5 V T = 25C, I = 7.0A, V = 0V j S GS SD t Reverse Recovery Time 700 nS T = 25C, I = 7.0A, di/dt 100A/s j rr F Q Reverse Recovery Charge 8.9 C V 50V RR DD t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L . on S D Thermal Resistance Parameter Min Typ Max Units Test Conditions R Junction-to-Case 1.25 thJC C/W R Case-to-sink 0.21 thCS R Junction-to-Ambient 80 Typical socket mount thJA Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com