+ ,& - %& ( D G S % & ( ) ( & * ) ) %+& % ) & * ) 2 D Pak TO-262 ,&-. & % / 0++123 % & Absolute Maximum Ratings Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 49 D C GS I T = 100C Continuous Drain Current, V 10V 35 A D C GS I Pulsed Drain Current 160 DM P T = 25C Power Dissipation 3.8 W D A P T = 25C Power Dissipation 94 W D C Linear Derating Factor 0.63 W/C V Gate-to-Source Voltage 20 V GS I Avalanche Current 25 A AR E Repetitive Avalanche Energy 9.4 mJ AR dv/dt Peak Diode Recovery dv/dt 5.0 V/ns T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R Junction-to-Case 1.5 JC R Junction-to-Ambient 40 C/W JA www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.058 V/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 17.5 m V = 10V, I = 25A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D g Forward Transconductance 19 S V = 25V, I = 25A fs DS D 25 V = 55V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 44V, V = 0V, T = 150C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS Q Total Gate Charge 63 I = 25A g D Q Gate-to-Source Charge 14 nC V = 44V gs DS Q Gate-to-Drain Mille) Charge 23 V = 10V, See Fig. 6 and 13 gd GS t Turn-On Delay Time 12 V = 28V d(on) DD t Rise Time 60 I = 25A r D ns t Turn-Off Delay Time 44 R = 12 d(off) G t Fall Time 45 V = 10V, See Fig. 10 f GS L Internal Source Inductance 7.5 nH Between lead, S and center of die contact C Input Capacitance 1470 V = 0V iss GS C Output Capacitance 360 V = 25V oss DS C Reverse Transfer Capacitance 88 pF = 1.0MHz, See Fig. 5 rss E Single Pulse Avalanche Energy 530 150 mJ I = 25A, L = 0.47mH AS AS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I Continuous Source Current MOSFET symbol S 49 (Body Diode) showing the ) G I Pulsed Source Current integral reverse SM 160 S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 25A, V = 0V SD J S GS t Reverse Recovery Time 63 95 ns T = 25C, I = 25A rr J F Q Reverse Recovery Charge 170 260 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Repetitive rating pulse width limited by I 25A, di/d 230A/s, V V , SD DD (BR)DSS max. junction temperature. (See fig. 11) T 175C J Pulse width 400s duty cycle 2%. Starting T = 25C, L = 0.48mH J This is a typical value at device destruction and represents R = 25, I = 25A. (See Figure 12) G AS operation outside rated limits. This is a calculated value limited to T = 175C . J % & % && ()* ++ 2 www.irf.com