X-On Electronics has gained recognition as a prominent supplier of IRFU220PBF MOSFETs across the USA, India, Europe, Australia, and various other global locations. IRFU220PBF MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

IRFU220PBF Vishay

Hot IRFU220PBF electronic component of Vishay
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See Product Specifications
Part No.IRFU220PBF
Manufacturer: Vishay
Category: MOSFETs
Description: N-Channel 200 V 4.8A (Tc) 2.5W (Ta), 42W (Tc) Through Hole TO-251AA
Datasheet: IRFU220PBF Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.19 ea
Line Total: USD 1.19 
Availability - 500
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
106
Ship by Mon. 06 Jan to Thu. 09 Jan
MOQ : 1
Multiples : 1
1 : USD 1.0553
10 : USD 0.8663
30 : USD 0.771
75 : USD 0.6776
525 : USD 0.6221
975 : USD 0.5936

3510
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 1.364
10 : USD 0.8107
100 : USD 0.6919

500
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 1.19
5 : USD 0.5992
25 : USD 0.5306
38 : USD 0.462
103 : USD 0.4368

2342
Ship by Mon. 30 Dec to Fri. 03 Jan
MOQ : 24
Multiples : 1
24 : USD 1.0347
100 : USD 0.8647
500 : USD 0.8281
1000 : USD 0.7128

   
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Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Alternate Case Style
Current Id Max
Current Temperature
Fall Time Tf
Full Power Rating Temperature
Junction To Case Thermal Resistance A
Operating Temperature Min
Operating Temperature Range
Pulse Current Idm
Rise Time
Termination Type
Turn Off Time
Turn On Time
Voltage Vds
Voltage Vds Typ
Voltage Vgs Max
Voltage Vgs Rds On Measurement
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We are delighted to provide the IRFU220PBF from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IRFU220PBF and other electronic components in the MOSFETs category and beyond.

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IRFR220, IRFU220, SiHFR220, SiHFU220 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt rating V (V) 200 DS Repetitive avalanche rated R ( )V = 10 V 0.80 DS(on) GS Surface mount (IRFR220, SiHFR220) Q (Max.) (nC) 14 g Straight lead (IRFU220, SiHFU220) Q (nC) 3.0 gs Available Available in tape and reel Q (nC) 7.9 gd Fast switching Configuration Single Ease of paralleling D Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DPAK IPAK (TO-252) (TO-251) DESCRIPTION D D Third generation power MOSFETs from Vishay provide the G designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. S G S D The DPAK is designed for surface mounting using vapor S G phase, infrared, or wave soldering techniques. The straight N-Channel MOSFET lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free and Halogen-free SiHFR220-GE3 SiHFR220TRL-GE3 - - SiHFU220-GE3 a a a Lead (Pb)-free IRFR220PbF IRFR220TRLPbF IRFR220TRPbF IRFR220TRRPbF IRFU220PbF Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 200 DS V Gate-Source Voltage V 20 GS T = 25 C 4.8 C Continuous Drain Current V at 10 V I GS D T = 100 C 3.0 A C a Pulsed Drain Current I 19 DM Linear Derating Factor 0.33 W/C e Linear Derating Factor (PCB Mount) 0.020 b Single Pulse Avalanche Energy E 161 mJ AS a Repetitive Avalanche Current I 4.8 A AR a Repetitive Avalanche Energy E 4.2 mJ AR Maximum Power Dissipation T = 25 C 42 C P W D e Maximum Power Dissipation (PCB mount) T = 25 C 2.5 A c Peak Diode Recovery dV/dt dV/dt 5.0 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak temperature) for 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T = 25 C, L = 14 mH, R = 25 , I = 4.8 A (see fig. 12). DD J g AS c. I 5.2 A, dI/dt 95 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). S15-2678-Rev. F, 16-Nov-15 Document Number: 91270 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFR220, IRFU220, SiHFR220, SiHFU220 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum Junction-to-Ambient R -- 110 thJA Maximum Junction-to-Ambient R -- 50 C/W thJA a (PCB mount) Maximum Junction-to-Case (Drain) R -- 3.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 200 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.29 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 200 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 160 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 2.9 A - - 0.80 DS(on) GS D b Forward Transconductance g V = 50 V, I = 2.9 A 1.7 - - S fs DS D Dynamic Input Capacitance C - 260 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 100- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -30- rss Total Gate Charge Q -- 14 g I = 4.8 A, V = 160 V, D DS Gate-Source Charge Q --V = 10 V 3.0 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --7.9 gd Turn-On Delay Time t -7.2 - d(on) Rise Time t -22 - r V = 100 V, I = 4.8 A, DD D ns b R = 18 , R = 20 , see fig. 10 Turn-Off Delay Time t -1G D 9- d(off) Fall Time t -13- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L die contact -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 4.8 S showing the A integral reverse G a Pulsed Diode Forward Current I -- 19 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 4.8 A, V = 0 V -- 1.8 V SD J S GS Body Diode Reverse Recovery Time t - 150 300 ns rr b T = 25 C, I = 4.8 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -0.91 1.8 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S15-2678-Rev. F, 16-Nov-15 Document Number: 91270 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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