IRFSL9N60A, SiHFSL9N60A www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Low gate charge Q results in simple drive g 2 I PAK (TO-262) requirement Available Improved gate, avalanche, and dynamic dv/dt ruggedness G Available Fully characterized capacitance and avalanche voltage and current S D Material categorization: for definitions of compliance S G please see www.vishay.com/doc 99912 N-Channel MOSFET Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For PRODUCT SUMMARY example, parts with lead (Pb) terminations are not RoHS-compliant. V (V) 600 Please see the information / tables in this datasheet for details DS R ( )V = 10 V 0.75 DS(on) GS APPLICATIONS Q max. (nC) 49 g Switch mode power supply (SMPS) Q (nC) 13 gs Q (nC) 20 Uninterruptable power supply gd Configuration Single High speed power switching This device is only for through-hole application APPLICABLE OFF LINE SMPS TOPOLOGIES Active clamped forward Main switch ORDERING INFORMATION 2 Package I PAK (TO-262) Lead (Pb)-free and halogen-free SiHFSL9N60A-GE3 Lead (Pb)-free IRFSL9N60APbF ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 600 DS V Gate-source voltage V 30 GS T = 25 C 9.2 C Continuous drain current V at 10 V I GS D T = 100 C 5.8 A C a Pulsed drain current I 37 DM Linear derating factor 1.3 W/C b Single pulse avalanche energy E 290 mJ AS a Repetitive avalanche current I 9.2 A AR a Repetitive avalanche energy E 17 mJ AR Maximum power dissipation T = 25 C P 170 W C D c Peak diode recovery dv/dt dv/dt 5.0 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Starting T = 25 C, L = 6.8 mH, R = 25 , I = 9.2 A (see fig. 12) J g AS c. I 9.2 A, di/dt 50 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case S20-0684-Rev. D, 07-Sep-2020 Document Number: 90362 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFSL9N60A, SiHFSL9N60A www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -40 thJA (PCB mounted, steady-state) C/W Maximum junction-to-case (drain) R -0.75 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0, I = 250 A 600 - - V DS GS D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 30 V - - 100 nA GSS GS V = 600 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 480 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 5.5 A - - 0.75 DS(on) GS D b Forward transconductance g V = 25 V, I = 3.1 A 5.5 - - S fs DS D Dynamic Input capacitance C - 1400 - iss V = 0 V, GS Output capacitance C -1V = 25 V, 80- oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -7.1- rss pF V = 1.0 V, f = 1.0 MHz - 1957 - DS Output capacitance C oss V = 0 V V = 480 V, f = 1.0 MHz - 49 - GS DS c Effective output capacitance C eff. V = 0 V to 480 V -96 - oss DS Total gate charge Q -- 49 g I = 9.2 A, V = 400 V, D DS Gate-source charge Q --V = 10 V 13 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --20 gd Turn-on delay time t -13 - d(on) Rise time t -25 - r V = 300 V, I = 9.2 A, DD D ns b R = 9.1 , R = 35.5 , see fig. 10 g D Turn-off delay time t -30- d(off) Fall time t -22- f Drain-Source Body Diode Characteristics Continuous source-drain diode current I MOSFET symbol -- 9.2 S D showing the A integral reverse G a Pulsed diode forward current I -- 37 SM p - n junction diode S b Body diode voltage V T = 25 C, I = 9.2 A, V = 0 V -- 1.5 V SD J S GS Body diode reverse recovery time t - 530 800 ns rr b T = 25 C, I = 9.2 A, di/dt = 100 A/s J F Body diode reverse recovery charge Q -3.0 4.4 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80% V OSS OSS DS DS S20-0684-Rev. D, 07-Sep-2020 Document Number: 90362 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000