IRFS4321PbF IRFSL4321PbF Applications HEXFET Power MOSFET Motion Control Applications V 150V DSS High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply R typ. 12m DS(on) Hard Switched and High Frequency Circuits 15m max. Benefits 85A I D Low R Reduces Losses DSON Low Gate Charge Improves the Switching D Performance D D Improved Diode Recovery Improves Switching & EMI Performance 30V Gate Voltage Rating Improves Robustness S S D Fully Characterized Avalanche SOA D G G G 2 D Pak TO-262 S IRFS4321PbF IRFSL4321PbF GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 85 A D C GS I T = 100C Continuous Drain Current, V 10V 60 D C GS I Pulsed Drain Current 330 DM P T = 25C Maximum Power Dissipation 350 W D C Linear Derating Factor 2.3 W/C V Gate-to-Source Voltage 30 V GS Single Pulse Avalanche Energy E 120 mJ AS (Thermally limited) T -55 to + 175 Operating Junction and C J T Storage Temperature Range STG 300 Soldering Temperature, for 10 seconds (1.6mm from case) Thermal Resistance Parameter Typ. Max. Units Junction-to-Case R 0.43* C/W JC Junction-to-Ambient R 40 JA 2 * R (end of life) for D Pak and TO-262 = 0.65C/W. This is the maximum measured value after 1000 temperature JC cycles from -55 to 150C and is accounted for by the physical wearout of the die attach medium. Notes through are on page 2 www.irf.com 1 12/9/10 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 150 V V = 0V, I = 250 A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 150 mV/C Reference to 25C, I = 1mA (BR)DSS J D R Static Drain-to-Source On-Resistance 12 15 V = 10V, I = 33A DS(on) m GS D V Gate Threshold Voltage 3.0 5.0 V V = V , I = 250 A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 150V, V = 0V DSS DS GS = 150V, V = 0V, T = 125C 1.0 mA V DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 0.8 G(int) Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 130 S V = 25V, I = 50A DS D Q Total Gate Charge 71 110 nC I = 50A g D Q Gate-to-Source Charge 24 V = 75V gs DS Q Gate-to-Drain Mille) Charge 21 V = 10V gd GS t Turn-On Delay Time 18 ns V = 98V d(on) DD t Rise Time 60 I = 50A r D t Turn-Off Delay Time 25 R = 2.5 d(off) G t Fall Time 35 V = 10V f GS C Input Capacitance 4460 pF V = 0V iss GS C Output Capacitance 390 V = 50V oss DS C Reverse Transfer Capacitance 82 = 1.0MHz rss Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions 85 I Continuous Source Current A MOSFET symbol D S (Body Diode) showing the G I Pulsed Source Current 330 A integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 50A, V = 0V SD J S GS t I = 50A Reverse Recovery Time 89 130 ns rr D Q V = 128V, Reverse Recovery Charge 300 450 nC rr R di/dt = 100A/ s I Reverse Recovery Current 6.5 A RRM t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Calculated continuous current based on maximum allowable junction Pulse width 400s duty cycle 2%. temperature. Package limitation current is 75A Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 0.096mH Jmax J R = 25, I = 50A, V =10V. Part not recommended for use G AS GS above this value. 2 www.irf.com