IRFB4410ZPbF IRFS4410ZPbF IRFSL4410ZPbF HEXFET Power MOSFET Applications D V 100V High Efficiency Synchronous Rectification in SMPS DSS Uninterruptible Power Supply R typ. 7.2m DS(on) High Speed Power Switching G max. 9.0m Hard Switched and High Frequency Circuits I 97A S D (Silicon Limited) Benefits Improved Gate, Avalanche and Dynamic dV/dt D D Ruggedness D Fully Characterized Capacitance and Avalanche SOA S S S D Enhanced body diode dV/dt and dI/dt Capability D D G G G Lead-Free 2 D Pak RoHS Compliant, Halogen-Free TO-220AB TO-262 IRFS4410ZPbF IRFSL4410ZPbF IRFB4410ZPbF GD S Gate Drain Source Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity IRFB4410ZPbF TO-220 Tube 50 IRFB4410ZPbF IRFSL4410ZPbF TO-262 Tube 50 IRFSL4410ZPbF Tube 50 IRFS4410ZPbF IRFS4410ZPbF D2Pak Tape and Reel Left 800 IRFS4410ZTRLPbF Tape and Reel Right 800 IRFS4410ZTRRPbF Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 97 D C GS I T = 100C Continuous Drain Current, VGS 10V (Silicon Limited) 69 A D C I Pulsed Drain Current 390 DM P T = 25C Maximum Power Dissipation 230 W D C 1.5 Linear Derating Factor W/C 20 V Gate-to-Source Voltage V GS 16 Peak Diode Recovery dv/dt V/ns T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) 10lb in (1.1N m) Mounting torque, 6-32 or M3 screw Avalanche Characteristics Single Pulse Avalanche Energy E 242 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b, A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 0.65 JC R Case-to-Sink, Flat Greased Surface , TO-220 0.50 C/W CS R Junction-to-Ambient, TO-220 62 JA 2 R Junction-to-Ambient (PCB Mount) , D Pak 40 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250 A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.12 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 7.2 9.0 V = 10V, I = 58A DS(on) m GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 150 A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 100V, V = 0V DSS DS GS 250 V = 80V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS R Internal Gate Resistance 0.70 G Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 140 S V = 10V, I = 58A DS D Q Total Gate Charge 83 120 nC I = 58A g D Q Gate-to-Source Charge 19 V =50V gs DS Q Gate-to-Drain Mille) Charge 27 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 56 I = 58A, V =0V, V = 10V sync g gd D DS GS t Turn-On Delay Time 16 ns V = 65V d(on) DD t Rise Time 52 I = 58A r D t Turn-Off Delay Time 43 R =2.7 d(off) G t Fall Time 57 V = 10V f GS C Input Capacitance 4820 pF V = 0V iss GS C Output Capacitance 340 V = 50V oss DS C Reverse Transfer Capacitance 170 = 1.0MHz, See Fig.5 rss C eff. (ER) 420 V = 0V, V = 0V to 80V , See Fig.11 oss Effective Output Capacitance (Energy Related) GS DS C eff. (TR) 690 V = 0V, V = 0V to 80V Effective Output Capacitance (Time Related) oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I D Continuous Source Current A MOSFET symbol S 97 (Body Diode) showing the G I Pulsed Source Current 390 A integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 58A, V = 0V SD J S GS t T = 25C V = 85V, Reverse Recovery Time 38 57 ns rr J R 46 69 T = 125C I = 58A J F di/dt = 100A/ s Q T = 25C Reverse Recovery Charge 53 80 nC rr J T = 125C 82 120 J I Reverse Recovery Current 2.5 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Repetitive rating pulse width limited by max. junction C eff. (TR) is a fixed capacitance that gives the same charging time oss temperature. as C while V is rising from 0 to 80% V . oss DS DSS Limited by T , starting T = 25C, L = 0.143mH Jmax J C eff. (ER) is a fixed capacitance that gives the same energy as oss R = 25, I = 58A, V =10V. Part not recommended for use G AS GS C while V is rising from 0 to 80% V . oss DS DSS above this value. When mounted on 1 square PCB (FR-4 or G-10 Material). For recom I 58A, di/dt 610A/s, V V , T 175C. mended footprint and soldering techniques refer to application note AN-994. SD DD (BR)DSS J Pulse width 400s duty cycle 2%.