IRFR224, IRFU224, SiHFR224, SiHFU224 www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Dynamic dV/dt rating DPAK IPAK Repetitive avalanche rated (TO-252) (TO-251) Surface-mount (IRFR224, SiHFR224) D D Straight lead (IRFU224, SiHFU224) G Available in tape and reel Available Fast switching S G S D Ease of paralleling G S Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc 99912 DESCRIPTION PRODUCT SUMMARY Third generation power MOSFETs form Vishay provide the V (V) 250 DS designer with the best combination of fast switching, R ()V = 10 V 1.1 DS(on) GS ruggedized device design, low on-resistance, and Q (Max.) (nC) 14 cost-effectiveness. g Q (nC) 2.7 gs The DPAK is designed for surface mounting using vapor Q (nC) 7.8 phase, infrared, or wave solderig techniques. The straight gd lead version (IRFU, SiHFU series) is for through-hole Configuration Single mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications. ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) SiHFR224-GE3 SiHFR224TR-GE3 SiHFR224TRL-GE3 SiHFU224-GE3 Lead (Pb)-free and halogen-free IRFR224TRPbF-BE3 - - - a a IRFR224PbF IRFR224TRPbF IRFR224TRLPbF IRFU224PbF Lead (Pb)-free IRFR224TRRPbF - - - Note a. See device orientation ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 250 DS V Gate-source voltage V 20 GS T = 25 C 3.8 C Continuous drain current V at 10 V I GS D T = 100 C 2.4 A C a Pulsed drain current I 15 DM Linear derating factor 0.33 W/C e Linear derating factor (PCB mount) 0.020 b Single pulse avalanche energy E 130 mJ AS a Repetitive avalanche current I 3.8 A AR a Repetitive avalanche energy E 4.2 mJ AR Maximum power dissipation t = 25 c 42 c P W D e Maximum power dissipation (pcb mount) t = 25 c 2.5 a c Peak diode recovery dV/dt dV/dt 4.8 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 50 V starting T = 25 C, L = 14 mH, R = 25 , I = 3.8 A (see fig. 12) DD J g AS c. I 3.8 A, dI/dt 90 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S21-0373-Rev. D, 19-Apr-2021 Document Number: 91271 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFR224, IRFU224, SiHFR224, SiHFU224 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -50 thJA a (PCB mount) C/W Maximum junction-to-ambient R - 110 thJA Maximum junction-to-case R -3.0 thJC Note a. When mounted on 1 square PCB ( FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 250 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.36 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 250 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 200 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 2.3 A -- 1.1 DS(on) GS D b Forward transconductance g V = 50 V, I = 2.3 A 1.5 - - S fs DS D Dynamic Input capacitance C - 260 - iss V = 0 V, GS Output capacitance C -7V = 25 V, 7- pF oss DS c f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -15- rss Total gate charge Q -- 14 g = 4.4 A, V = 200 V, I D DS Gate-source charge Q --V = 10 V 2.7 nC gs GS b, c see fig. 6 and 13 Gate-drain charge Q --7.8 gd Turn-on delay time t -7.0 - d(on) Rise time t V = 125 V, I = 4.4 A, -13 - r DD D ns R = 18 , R = 28 , G D Turn-off delay time t -20- d(off) b, c see fig. 10 Fall time t -12- f D Between lead, Internal drain inductance L -4.5 - D 6 mm (0.25 ) from nH G package and center of Internal source inductance L -7.5 - die contact S S Drain-Source Body Diode Characteristics MOSFET symbol D -- 3.8 Continuous source-drain diode current I S showing the A integral reverse G a Pulsed diode forward current I -- 15 SM p - n junction diode S b Body diode voltage V T = 25 C, I = 3.8 A, V = 0 V -- 1.8 V SD J S GS Body diode reverse recovery time t - 200 400 ns rr b T = 25 C, I = 4.4 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -0.93 1.9 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0373-Rev. D, 19-Apr-2021 Document Number: 91271 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000