IRFR1018EPbF IRFU1018EPbF Applications HEXFET Power MOSFET High Efficiency Synchronous Rectification in SMPS D V 60V DSS Uninterruptible Power Supply R typ. 7.1m DS(on) High Speed Power Switching max. 8.4m Hard Switched and High Frequency Circuits G I 79A D (Silicon Limited) I S 56A D (Package Limited) Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability D-Pak I-Pak IRFR1018EPbF IRFU1018EPbF GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 79 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 56 D C GS I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 56 A D C GS I 315 Pulsed Drain Current DM P T = 25C 110 Maximum Power Dissipation W D C 0.76 Linear Derating Factor W/C V 20 Gate-to-Source Voltage V GS 21 Peak Diode Recovery dv/dt V/ns T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Avalanche Characteristics Single Pulse Avalanche Energy E 88 mJ AS (Thermally limited) Avalanche Current I 47 A AR Repetitive Avalanche Energy E 11 mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 1.32 JC R C/W Junction-to-Ambient (PCB Mount) 50 JA R 110 Junction-to-Ambient JA Notes through are on page 2 www.irf.com 1 4/21/09 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 60 V V = 0V, I = 250 A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.073 V/C Reference to 25C, I = 5mA (BR)DSS J D R Static Drain-to-Source On-Resistance 7.1 8.4 V = 10V, I = 47A m DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 100 A GS(th) DS GS D I Drain-to-Source Leakage Current 20 A V = 60V, V = 0V DSS DS GS 250 V = 48V, V = 0V, T = 125C DS GS J I Gate-to-Source Forward Leakage 100 nA V = 20V GSS GS Gate-to-Source Reverse Leakage -100 V = -20V GS Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions gfs Forward Transconductance 110 S V = 50V, I = 47A DS D Q Total Gate Charge 46 69 nC I = 47A g D Q Gate-to-Source Charge 10 V = 30V gs DS Q Gate-to-Drain Mille) Charge 12 V = 10V gd GS Q Total Gate Charge Sync. (Q - Q ) 34 I = 47A, V =0V, V = 10V sync g gd D DS GS R Internal Gate Resistance 0.73 G(int) t Turn-On Delay Time 13 ns V = 39V d(on) DD t Rise Time 35 I = 47A r D t Turn-Off Delay Time 55 R = 10 d(off) G t Fall Time 46 V = 10V f GS C Input Capacitance 2290 V = 0V iss GS C Output Capacitance 270 V = 50V oss DS C Reverse Transfer Capacitance 130 pF = 1.0MHz rss C eff. (ER) 390 V = 0V, V = 0V to 60V Effective Output Capacitance (Energy Related) oss GS DS C eff. (TR) 630 V = 0V, V = 0V to 60V Effective Output Capacitance (Time Related) oss GS DS Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I Continuous Source Current A MOSFET symbol 79 S D (Body Diode) showing the G I Pulsed Source Current 315 integral reverse SM S (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C, I = 47A, V = 0V SD J S GS t Reverse Recovery Time 26 39 ns T = 25C V = 51V, rr J R T = 125C I = 47A 31 47 J F di/dt = 100A/ s T = 25C Q Reverse Recovery Charge 24 36 nC rr J 35 53 T = 125C J I Reverse Recovery Current 1.8 A T = 25C RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Calculated continuous current based on maximum allowable junction Pulse width 400s duty cycle 2%. temperature. Bond wire current limit is 56A. Note that current C eff. (TR) is a fixed capacitance that gives the same charging time oss limitations arising from heating of the device leads may occur with as C while V is rising from 0 to 80% V . oss DS DSS some lead mounting arrangements. C eff. (ER) is a fixed capacitance that gives the same energy as oss Repetitive rating pulse width limited by max. junction C while V is rising from 0 to 80% V . oss DS DSS temperature. When mounted on 1 square PCB (FR-4 or G-10 Material). For recom mended footprint and soldering techniques refer to application note AN-994. Limited by T , starting T = 25C, L = 0.08mH Jmax J R is measured at T approximately 90C. R = 25, I = 47A, V =10V. Part not recommended for J GS G AS use above this value. I 47A, di/dt 1668A/s, V V , T 175C. SD DD (BR)DSS J 2 www.irf.com