IRFR430A, IRFU430A, SiHFR430A, SiHFU430A www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Low gate charge Q results in simple drive g DPAK IPAK requirement (TO-252) (TO-251) Improved gate, avalanche, and dynamic D D dV/dt ruggedness G Available Fully characterized capacitance an d avalanche voltage and current S G S D G Effective C specified S oss Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc 99912 PRODUCT SUMMARY APPLICATIONS V (V) 500 DS Switch mode power supply (SMPS) R ()V = 10 V 1.7 DS(on) GS Uninterruptible power supply Q (Max.) (nC) 24 g High speed power switching Q (nC) 6.5 gs Q (nC) 13 gd Configuration Single ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free and a a a SiHFR430A-GE3 SiHFR430ATR-GE3 SiHFR430ATRL-GE3 SiHFR430ATRR-GE3 SiHFU430A-GE3 halogen-free a a Lead (Pb)-free IRFR430APbF IRFR430ATRPbF IRFR430ATRLPbF - IRFU430APbF Note a. See device orientation ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 500 DS V Gate-source voltage V 30 GS T = 25 C 5.0 C Continuous drain current V at 10 V I GS D T = 100 C 3.2 A C a Pulsed drain current I 20 DM Linear derating factor 0.91 W/C b Single pulse avalanche energy E 130 mJ AS a Repetitive avalanche current I 5.0 A AR a Repetitive avalanche energy E 11 mJ AR Maximum power dissipation T = 25 C P 110 W C D c Peak diode recovery dV/dt dV/dt 3.0 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) For 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Starting T = 25 C, L = 11 mH, R = 25 , I = 5.0 A (see fig. 12) J g AS c. I 5.0 A, dI/dt 320 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case S21-0373-Rev. E, 19-Apr-2021 Document Number: 91276 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFR430A, IRFU430A, SiHFR430A, SiHFU430A www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum junction-to-ambient R -62 thJA Case-to-sink, flat, greased surface R 0.50 - C/W thCS Maximum junction-to-case (drain) R -1.1 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 500 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.60 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.5 V GS(th) DS GS D Gate-source leakage I V = 30 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 400 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 3.0 A -- 1.7 DS(on) GS D Forward transconductance g V = 50 V, I = 3.0 A 2.3 - - S fs DS D Dynamic Input capacitance C - 490 - iss V = 0 V, GS Output capacitance C -7V = 25 V, 5- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -4.5- rss = 1.0 V, f = 1.0 MHz - 750 - V DS Output capacitance C oss V = 10 V V = 400 V, f = 1.0 MHz - 25 - pF GS DS c Effective output capacitance C eff. V = 0 V to 400 V -51 - oss DS Total gate charge Q -- 24 g I = 5.0 A, V = 400 V, D DS Gate-source charge Q --V = 10 V 6.5 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --13 gd Turn-on delay time t -8.7 - d(on) Rise time t -27 - r V = 250 V, I = 5.0 A, DD D ns b R = 15 , R = 50 , see fig. 10 g D Turn-off delay time t -17- d(off) Fall time t -16- f Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 5.0 S showing the A G integral reverse a Pulsed diode forward current I -- 20 SM p - n junction diode S b Body diode voltage V T = 25 C, I = 5.0 A, V = 0 V -- 1.5 V SD J S GS Body diode reverse recovery time t - 410 620 ns rr b T = 25 C, I = 5.0 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q -1.4 2.1 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80 % V oss oss DS DS S21-0373-Rev. E, 19-Apr-2021 Document Number: 91276 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000