IRFR014, IRFU014, SiHFR014, SiHFU014 www.vishay.com Vishay Siliconix Power MOSFET FEATURES D Dynamic dV/dt rating Surface-mount (IRFR014, SiHFR014) DPAK IPAK Straight lead (IRFU014, SiHFU014) (TO-252) (TO-251) D Available in tape and reel G D Available Fast switching Ease of paralleling S G S D Simple drive requirements G S Material categorization: for definitions of compliance N-Channel MOSFET please see www.vishay.com/doc 99912 DESCRIPTION PRODUCT SUMMARY Third generation power MOSFETs from Vishay provide the V (V) 60 DS designer with the best combination of fast switching, R ()V = 10 V 0.20 DS(on) GS ruggedized device design, low on-resistance and Q max. (nC) 11 cost-effectiveness. g The DPAK is designed for surface mounting using vapor Q (nC) 3.1 gs phase, infrared, or wave soldering techniques. The straight Q (nC) 5.8 gd lead version (IRFU, SiHFU series) is for through-hole Configuration Single mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORDERING INFORMATION PACKAGE DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free and Halogen-free SiHFR014-GE3 SiHFR014TRL-GE3 SiHFR014TR-GE3 SIHFU014-GE3 a a IRFR014PbF IRFR014TRLPbF IRFR014TRPbF IRFU014PbF Lead (Pb)-free IRFR014TRRPbF - - - ab ab ab Lead (Pb)-free and Halogen-free IRFR014PbF-BE3 IRFR014TRLPbF-BE3 IRFR014TRPbF-BE3 - Notes a. See device orientation b. -BE3 denotes alternate manufacturing location ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 60 DS V Gate-source voltage V 20 GS T = 25 C 7.7 C Continuous drain current V at 10 V I GS D T = 100 C 4.9 A C a Pulsed drain current I 31 DM Linear derating factor 0.20 W/C e Linear derating factor (PCB mount) 0.020 b Single pulse avalanche energy E 27.4 mJ AS Maximum power dissipation T = 25 C 25 C P W D e Maximum power dissipation (PCB mount) T = 25 C 2.5 A c Peak diode recovery dV/dt dV/dt 4.5 V/ns Operating junction and storage temperature range T , T -55 to +150 J stg C d Soldering recommendations (peak temperature) for 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. V = 25 V, starting T = 25 C, L = 924 H, R = 25 , I = 7.7 A (see fig. 12) DD J g AS c. I 10 A, dI/dt 90 A/s, V V , T 150 C SD DD DS J d. 1.6 mm from case e. When mounted on 1 square PCB (FR-4 or G-10 material) S21-0466-Rev. F, 17-May-2021 Document Number: 91263 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 IRFR014, IRFU014, SiHFR014, SiHFU014 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLMIN.TYP.MAX.UNIT Maximum junction-to-ambient R - - 110 thJA a Maximum junction-to-ambient (PCB mount) R -- 50 C/W thJA Maximum junction-to-case (drain) R -- 5.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material) SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 60 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.068 - V/C DS DS J D Gate-source threshold voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-source leakage I V = 20 V - - 100 nA GSS GS V = 60 V, V = 0 V - - 25 DS GS Zero gate voltage drain current I A DSS V = 48 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-source on-state resistance R V = 10 V I = 4.6 A - - 0.20 DS(on) GS D Forward transconductance g V = 25 V, I = 4.6 A 2.4 - - S fs DS D Dynamic Input capacitance C - 300 - iss V = 0 V, GS Output capacitance C -V = 25 V, 160- pF oss DS f = 1.0 MHz, see fig. 5 Reverse transfer capacitance C -29- rss Total gate charge Q -- 11 g I = 10 A, V = 48 V, D DS Gate-source charge Q --V = 10 V 3.1 nC gs GS b see fig. 6 and 13 Gate-drain charge Q --5.8 gd Turn-on delay time t -10 - d(on) Rise time t -50 - r V = 30 V, I = 10 A, DD D ns b R = 24 , R = 2.7 , see fig. 10 Turn-off delay time t -1g D 3- d(off) Fall time t -19- f D Internal drain inductance L Between lead, -4.5 - D 6 mm (0.25 ) from nH package and center G -7.5 - Internal source inductance L S c of die contact S Drain-source body diode characteristics Continuous source-drain diode current I MOSFET symbol -- 7.7 S D showing the A a integral reverse G Pulsed diode forward current I -- 31 SM p - n junction diode S b Body diode voltage V T = 25 C, I = 7.7 A, V = 0 V -- 1.6 V SD J S GS Body diode reverse recovery time t - 70 140 ns rr b T = 25 C, I = 10 A, dI/dt = 100 A/s J F Body diode reverse recovery charge Q - 0.20 0.40 C rr Forward turn-on time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11) b. Pulse width 300 s duty cycle 2 % S21-0466-Rev. F, 17-May-2021 Document Number: 91263 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000