IRFS9N60A, SiHFS9N60A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low gate charge Q results in simple drive g V (V) 600 DS requirement R ( )V = 10 V 0.75 DS(on) GS Available Improved gate, avalanche and dynamic dV/dt Q max. (nC) 49 g ruggedness Q (nC) 13 gs Available Fully characterized capacitance and avalanche Q (nC) 20 gd voltage and current Configuration Single Material categorization: for definitions of compliance D please see www.vishay.com/doc 99912 Note 2 D PAK (TO-263) * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non-RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. G Please see the information / tables in this datasheet for details. APPLICATIONS Switch mode power supply (SMPS) D G S S Uninterruptible power supply N-Channel MOSFET High speed power switching APPLICABLE OFF LINE SMPS TOPOLOGIES Active clamped forward Main switch ORDERING INFORMATION 2 2 2 Package D PAK (TO-263) D PAK (TO-263) D PAK (TO-263) a a Lead (Pb)-free and Halogen-free SiHFS9N60A-GE3 SiHFS9N60ATRR-GE3 SiHFS9N60ATRL-GE3 a a IRFS9N60APbF IRFS9N60ATRRPbF IRFS9N60ATRLPbF Lead (Pb)-free a a SiHFS9N60A-E3 SiHFS9N60ATR-E3 SiHFS9N60ATL-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 600 DS V Gate-Source Voltage V 30 GS T = 25 C 9.2 C Continuous Drain Current V at 10 V I GS D T = 100 C 5.8 A C a Pulsed Drain Current I 37 DM Linear Derating Factor 1.3 W/C b Single Pulse Avalanche Energy E 290 mJ AS a Repetitive Avalanche Current I 9.2 A AR a Repetitive Avalanche Energy E 17 mJ AR Maximum Power Dissipation T = 25 C P 170 W C D c Peak Diode Recovery dV/dt dV/dt 5.0 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Starting T = 25 C, L = 6.8 mH, R = 25 , I = 9.2 A (see fig. 12). J g AS c. I 9.2 A, dI/dt 50 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. S16-0763-Rev. D, 02-May-16 Document Number: 91287 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFS9N60A, SiHFS9N60A www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -40 thJA C/W Maximum Junction-to-Case (Drain) R -0.75 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0, I = 250 A 600 - - V DS GS D V/C V Temperature Coefficient V /T Reference to 25 C, I = 1 mA -0.66 - DS J DS D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 600 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 480 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 5.5 A - - 0.75 DS(on) GS D Forward Transconductance g V = 25 V, I = 3.1 A 5.5 - - S fs DS D Dynamic Input Capacitance C - 1400 - iss V = 0 V, GS Output Capacitance C -V = 25 V, 180- oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -7.1- rss pF V = 1.0 V, f = 1.0 MHz - 1957 - DS Output Capacitance C oss V = 0 V V = 480 V, f = 1.0 MHz - 49 - GS DS c Effective Output Capacitance C eff. V = 0 V to 480 V -96 - oss DS Total Gate Charge Q -- 49 g I = 9.2 A, V = 400 V D DS Gate-Source Charge Q --V = 10 V 13 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --20 gd Turn-On Delay Time t -13 - d(on) V = 300 V, I = 9.2 A DD D Rise Time t -25 - r R = 9.1 , R = 35.5 ns g D Turn-Off Delay Time t -30- b d(off) see fig. 10 Fall Time t -22- f Gate Input Resistance R f = 1 MHz, open drain 0.5 - 3.2 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 9.2 S showing the A integral reverse G a p - n junction diode Pulsed Diode Forward Current I -- 37 SM S b Body Diode Voltage V T = 25 C, I = 9.2 A, V = 0 V -- 1.5 V SD J S GS Body Diode Reverse Recovery Time t - 530 800 ns rr b T = 25 C, I = 9.2 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q -3.0 4.4 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80 % V . oss oss DS DS S16-0763-Rev. D, 02-May-16 Document Number: 91287 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000