Strong IRFET IRFB7787PbF IRFS7787PbF IRFSL7787PbF HEXFET Power MOSFET Application Brushed Motor drive applications D V 75V BLDC Motor drive applications DSS Battery powered circuits R typ. 6.9m DS(on) Half-bridge and full-bridge topologies G Synchronous rectifier applications max 8.4m Resonant mode power supplies S I 76A OR-ing and redundant power switches D DC/DC and AC/DC converters DC/AC Inverters D D Benefits S S S D G Improved Gate, Avalanche and Dynamic dV/dt Ruggedness D G G Fully Characterized Capacitance and Avalanche SOA 2 TO-220AB Enhanced body diode dV/dt and dI/dt Capability D Pak TO-262 IRFB7787PbF Lead-Free, RoHS Compliant IRFS7787PbF IRFSL7787PbF G D S Gate Drain Source Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRFB7787PbF TO-220 Tube 50 IRFB7787PbF IRFSL7787PbF TO-262 Tube 50 IRFSL7787PbF Tube 50 IRFS7787PbF 2 IRFS7787PbF D -Pak Tape and Reel Left 800 IRFS7787TRLPbF 40 80 I = 46A D 30 60 20 40 T = 125C J 10 20 T = 25C J 0 0 4 8 12 16 20 25 50 75 100 125 150 175 V , Gate-to-Source Voltage (V) GS T , CaseTemperature (C) C Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com 2015 International Rectifier Submit Datasheet Feedback April 22, 2015 R (on), Drain-to -Source On Resistance ( m) DS I , Drain Current (A) D IRFB/S/SL7787PbF Absolute Maximum Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 76 D C GS I T = 100C Continuous Drain Current, V 10V 54 A D C GS I Pulsed Drain Current 280 DM P T = 25C Maximum Power Dissipation 125 W D C Linear Derating Factor 0.83 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 175 T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Avalanche Characteristics E Single Pulse Avalanche Energy 144 AS (Thermally limited) mJ E 209 Single Pulse Avalanche Energy AS (Thermally limited) I Avalanche Current A AR See Fig 15, 16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R Junction-to-Case 1.2 JC R Case-to-Sink, Flat Greased Surface 0.50 C/W CS R Junction-to-Ambient 62 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 0.06 V/C Reference to 25C, I = 1mA D (BR)DSS J R Static Drain-to-Source On-Resistance 6.9 8.4 V = 10V, I = 46A m DS(on) GS D 8.2 V = 6.0V, I = 23A GS D V Gate Threshold Voltage 2.1 3.7 V V = V , I = 100A GS(th) DS GS D 1.0 V = 75 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V = 75V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 2.1 G Notes: Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 0.138mH, R = 50, I = 46A, V =10V. Jmax J G AS GS I 46A, di/dt 425A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS R is measured at T approximately 90C. J Limited by T , starting T = 25C, L = 1mH, R = 50, I = 20A, V =10V. Jmax J G AS GS When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994: