IRFU110, SiHFU110 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) 100 DS Definition R ( )V = 10 V 0.54 Straight Lead DS(on) GS Available in Tape and Reel Q (Max.) (nC) 8.3 g Dynamic dV/dt Rating Q (nC) 2.3 gs Repetitive Avalanche Rated Q (nC) 3.8 gd Fast Switching Configuration Single Ease of Paralleling Simple Drive Requirements D IPAK Compliant to RoHS Directive 2002/95/EC (TO-251) DESCRIPTION D Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, G ruggedized device design, low on-resistance and S cost-effectiveness. D G S N-Channel MOSFET ORDERING INFORMATION Package IPAK (TO-251) Lead (Pb)-free and Halogen-free SiHFU110-GE3 IRFU110PbF Lead (Pb)-free SiHFU110-E3 IRFU110 SnPb SiHFU110 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 100 DS V 20 Gate-Source Voltage V GS T = 25 C 4.3 C Continuous Drain Current V at 10 V I GS D T = 100 C 2.7 A C a Pulsed Drain Current I 17 DM Linear Derating Factor 0.2 W/C b Single Pulse Avalanche Energy E 75 mJ AS a Repetitive Avalanche Current I 4.3 A AR a Repetitive Avalanche Energy E 2.5 mJ AR Maximum Power Dissipation T = 25 C P 25 W C D c Peak Diode Recovery dV/dt dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 8.1 mH, R = 25 , I = 4.3 A (see fig. 12). DD J g AS c. I 5.6 A, dI/dt 75 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91397 www.vishay.com S10-2549-Rev. C, 08-Nov-10 1IRFU110, SiHFU110 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL MIN. TYP. MAX. UNIT Maximum Junction-to-Ambient R - - 110 thJA C/W Maximum Junction-to-Case (Drain) R -- 5.0 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.63 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 100 V, V = 0 V - - 25 DS GS A Zero Gate Voltage Drain Current I DSS V = 80 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 0.90 A - - 0.54 DS(on) GS D Forward Transconductance g V = 50 V, I = 0.90 A 1.1 - - S fs DS D Dynamic Input Capacitance C - 180 - iss V = 0 V, GS Output Capacitance C -8V = 25 V, 1- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -15- rss Total Gate Charge Q -- 8.3 g I = 5.6 A, V = 80 V, D DS Gate-Source Charge Q --V = 10 V 2.3 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --3.8 gd Turn-On Delay Time t -6.9 - d(on) Rise Time t -16 - r V = 50 V, I = 5.6 A, DD D ns b R = 24 , R = 8.4 , see fig. 10 g D Turn-Off Delay Time t -15- d(off) Fall Time t -9.4- f D Between lead, Internal Drain Inductance L -4.0 - D 6 mm (0.25 ) from nH package and center of G Internal Source Inductance L -6.0 - S die contact S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 1.5 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 12 SM p - n junction diode S b Body Diode Voltage V T = 25 C, I = 1.5 A, V = 0 V -- 2.5 V SD J S GS Body Diode Reverse Recovery Time t - 100 200 ns rr b T = 25 C, I = 5.6 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.44 0.88 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. www.vishay.com Document Number: 91397 2 S10-2549-Rev. C, 08-Nov-10