IRFR420A, IRFU420A, SiHFR420A, SiHFU420A www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low gate Charge Q results in simple drive g V (V) 500 DS requirement R ( )V = 10 V 3.0 DS(on) GS Improved gate, avalanche and dynamic dV/dt Q max. (nC) 17 g ruggedness Q (nC) 4.3 gs Available Fully characterized capacitance and Q (nC) 8.5 gd avalanche voltage and current Configuration Single Effective C specified oss D Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DPAK IPAK (TO-252) (TO-251) APPLICATIONS D D G Switch mode power supply (SMPS) Uninterruptible power supply S G S High speed power switching D G S N-Channel MOSFET ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) a Lead (Pb)-free and Halogen-free SiHFR420A-GE3 SiHFR420ATR-GE3 SiHFR420ATRL-GE3 SiHFU420A-GE3 a Lead (Pb)-free IRFR420APbF IRFR420ATRPbF IRFR420ATRLPbF IRFU420APbF Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 500 DS V Gate-Source Voltage V 30 GS T = 25 C 3.3 C Continuous Drain Current V at 10 V I GS D T = 100 C 2.1 A C a Pulsed Drain Current I 10 DM Linear Derating Factor 0.67 W/C b Single Pulse Avalanche Energy E 140 mJ AS a Repetitive Avalanche Current I 2.5 A AR a Repetitive Avalanche Energy E 5.0 mJ AR Maximum Power Dissipation T = 25 C P 83 W C D c Peak Diode Recovery dV/dt dV/dt 3.4 V/ns Operating Junction and Storage Temperature Range T , T -55 to +150 J stg C d Soldering Recommendations (Peak temperature) for 10 s 300 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Starting T = 25 C, L = 45 mH, R = 25 , I = 2.5 A (see fig. 12). J g AS c. I 2.5 A, dI/dt 270 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. S16-1522-Rev. D, 08-Aug-16 Document Number: 91274 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFR420A, IRFU420A, SiHFR420A, SiHFU420A www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA Case-to-Sink, Flat, Greased Surface R 0.50 - C/W thCS Maximum Junction-to-Case (Drain) R -1.5 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 500 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.60 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.5 V GS(th) DS GS D Gate-Source Leakage I V = 30 V - - 100 nA GSS GS V = 500 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 400 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 1.5 A -- 3.0 DS(on) GS D Forward Transconductance g V = 50 V, I = 1.5 A 1.4 - - S fs DS D Dynamic Input Capacitance C - 340 - iss V = 0 V, GS Output Capacitance C -5V = 25 V, 3- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -2.7- rss V = 1.0 V, f = 1.0 MHz - 490 - DS Output Capacitance C oss V = 0 V V = 400 V, f = 1.0 MHz - 15 - pF GS DS c Effective Output Capacitance C eff. V = 0 V to 400 V -28 - oss DS Total Gate Charge Q -- 17 g I = 2.5 A, V = 400 V, D DS Gate-Source Charge Q --V = 10 V 4.3 nC gs GS b see fig. 6 and 13 Gate-Drain Charge Q --8.5 gd Turn-On Delay Time t -8.1 - d(on) Rise Time t -12 - V = 250 V, I = 2.5 A, r DD D ns b R = 21 , R = 97 , see fig. 10 Turn-Off Delay Time t -1g D 6- d(off) Fall Time t -13- f Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 3.3 S showing the A G integral reverse a Pulsed Diode Forward Current I -- 10 SM S p - n junction diode b Body Diode Voltage V T = 25 C, I = 2.5 A, V = 0 V -- 1.6 V SD J S GS Body Diode Reverse Recovery Time t - 330 500 ns rr b T = 25 C, I = 2.5 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 760 1140 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. c. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 % to 80 % V . oss oss DS DS S16-1522-Rev. D, 08-Aug-16 Document Number: 91274 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000