PD - 95950A
IRFR48ZPbF
IRFU48ZPbF
Features
Advanced Process Technology
HEXFET Power MOSFET
Ultra Low On-Resistance
D
175C Operating Temperature
V = 55V
Fast Switching DSS
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
R = 11m
DS(on)
G
Description
I = 42A
D
S
This HEXFET Power MOSFET utilizes the latest
processing techniques to achieve extremely low
on-resistance per silicon area. Additional features
of this design are a 175C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These features combine
to make this design an extremely efficient and
reliable device for use in a wide variety of
D-Pak I-Pak
applications.
IRFR48ZPbF IRFU48ZPbF
Absolute Maximum Ratings
Parameter Max. Units
I @ T = 25C Continuous Drain Current, V @ 10V (Silicon Limited)
GS 62
D C
I @ T = 100C Continuous Drain Current, V @ 10V 44 A
GS
D C
Continuous Drain Current, V @ 10V (Package Limited)
I @ T = 25C GS 42
D C
Pulsed Drain Current
I
250
DM
P @T = 25C Power Dissipation 91 W
D C
Linear Derating Factor 0.61 W/C
V Gate-to-Source Voltage 20 V
GS
Single Pulse Avalanche Energy
E 74 mJ
AS (Thermally limited)
Single Pulse Avalanche Energy Tested Value
E (Tested ) 110
AS
Avalanche Current
I See Fig.12a, 12b, 15, 16 A
AR
E Repetitive Avalanche Energy mJ
AR
T Operating Junction and -55 to + 175
J
T Storage Temperature Range C
STG
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m)
Thermal Resistance
Parameter Typ. Max. Units
Junction-to-Case
R 1.64
JC
Junction-to-Ambient (PCB mount)
R 40 C/W
JA
R Junction-to-Ambient 110
JA
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Electrical Characteristics @ T = 25C (unless otherwise specified)
J
Parameter Min. Typ. Max. Units Conditions
V Drain-to-Source Breakdown Voltage 55 V V = 0V, I = 250A
(BR)DSS GS D
V / T Breakdown Voltage Temp. Coefficient 0.054 V/C Reference to 25C, I = 1mA
(BR)DSS J D
R Static Drain-to-Source On-Resistance 8.86 11 m V = 10V, I = 37A
DS(on) GS D
V Gate Threshold Voltage 2.0 4.0 V V = V , I = 50A
GS(th) DS GS D
gfs Forward Transconductance 120 S V = 25V, I = 37A
DS D
I Drain-to-Source Leakage Current 20 A V = 55V, V = 0V
DSS DS GS
250 V = 55V, V = 0V, T = 125C
DS GS J
I Gate-to-Source Forward Leakage 200 nA V = 20V
GSS GS
Gate-to-Source Reverse Leakage -200 V = -20V
GS
Q Total Gate Charge 40 60 I = 37A
g D
Q Gate-to-Source Charge 11 nC V = 44V
gs DS
Q Gate-to-Drain Mille) Charge 15 V = 10V
gd GS
t Turn-On Delay Time 15 V = 28V
d(on) DD
t Rise Time 61 I = 37A
r D
t Turn-Off Delay Time 40 ns R = 12
d(off) G
t Fall Time 35 V = 10V
f GS
L Internal Drain Inductance 4.5 Between lead, D
D
nH 6mm (0.25in.)
G
L Internal Source Inductance 7.5 from package
S
S
and center of die contact
C Input Capacitance 1720 V = 0V
iss GS
C Output Capacitance 290 V = 25V
oss DS
C Reverse Transfer Capacitance 160 pF = 1.0MHz
rss
C Output Capacitance 1000 V = 0V, V = 1.0V, = 1.0MHz
oss GS DS
C Output Capacitance 230 V = 0V, V = 44V, = 1.0MHz
oss GS DS
C eff. Effective Output Capacitance 360 V = 0V, V = 0V to 44V
oss GS DS
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
I Continuous Source Current 37 MOSFET symbol
S
(Body Diode) A showing the
I Pulsed Source Current 250 integral reverse
SM
(Body Diode) p-n junction diode.
V Diode Forward Voltage 1.3 V T = 25C, I = 37A, V = 0V
SD J S GS
t Reverse Recovery Time 20 40 ns T = 25C, I = 37A, V = 28V
rr J F DD
Q di/dt = 100A/s
Reverse Recovery Charge 14 28 nC
rr
t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
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