PD - 91290C
IRFY340C,IRFY340CM
POWER MOSFET 400V, N-CHANNEL
THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY
Product Summary
Part Number RDS(on) ID Eyelets
IRFY340C 0.55 8.7A Ceramic
IRFY340CM 0.55 8.7A Ceramic
HEXFET MOSFET technology is the key to International
Rectifiers advanced line of power MOSFET transistors. The
TO-257AA
efficient geometry design achieves very low on-state re-
sistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advan- Features:
tages of MOSFETs, such as voltage control, very fast switch-
ing, ease of paralleling and electrical parameter temperature
Simple Drive Requirements
stability. They are well-suited for applications such as switch-
Ease of Paralleling
ing power supplies, motor controls, inverters, choppers,
Hermetically Sealed
audio amplifiers, high energy pulse circuits, and virtually
Electrically Isolated
any application where high reliability is required. The
Ceramic Eyelets
HEXFET transistors totally isolated package eliminates the
Ideally Suited For Space Level
need for additional isolating material between the device
Applications
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
Absolute Maximum Ratings
Parameter Units
I @ V = 10V, T = 25C Continuous Drain Current 8.7
D GS C
A
I @ V = 10V, T = 100C Continuous Drain Current 5.5
D GS C
I Pulsed Drain Current 35
DM
P @ T = 25C Max. Power Dissipation 100 W
D C
Linear Derating Factor 0.8 W/C
V Gate-to-Source Voltage 20 V
GS
E Single Pulse Avalanche Energy 520 mJ
AS
I Avalanche Current 8.7 A
AR
E Repetitive Avalanche Energy 10 mJ
AR
dv/dt Peak Diode Recovery dv/dt 4.0 V/ns
T Operating Junction -55 to 150
J
o
T Storage Temperature Range C
STG
Lead Temperature 300(0.063in./1.6mm from case for 10 sec)
Weight 4.3 (Typical) g
For footnotes refer to the last page
www.irf.com 1
4/18/01IRFY340C, IRFY340CM
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV Drain-to-Source Breakdown Voltage 400 V V = 0V, I = 1.0mA
DSS GS D
BV / T Temperature Coefficient of Breakdown 0.46 V/C Reference to 25C, I = 1.0mA
DSS J D
Voltage
R Static Drain-to-Source On-State 0.55 V = 10V, I = 5.5A
DS(on) GS D
Resistance
V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A
GS(th) DS GS D
g Forward Transconductance 4.9 S ( )V > 15V, I = 5.5A
fs DS DS
I Zero Gate Voltage Drain Current 25 V = 320V ,V =0V
DSS DS GS
A
250 V = 320V,
DS
V = 0V, T = 125C
GS J
I Gate-to-Source Leakage Forward 100 V = 20V
GSS GS
nA
I Gate-to-Source Leakage Reverse -100 V = -20V
GSS GS
Q Total Gate Charge 65 V =10V, I = 8.7A
g GS D
Q Gate-to-Source Charge 10 nC V = 200V
gs DS
Q Gate-to-Drain (Miller) Charge 40.5
gd
t Turn-On Delay Time 25 V = 200V, I = 8.7A,
d(on) DD D
t Rise Time 92 R = 9.1
r G
ns
t Turn-Off Delay Time 79
d(off)
t Fall Time 58
f
Measured from drain lead (6mm/0.25in. from
L + L Total Inductance 6.8
S D
nH
package) to source lead (6mm/0.25in. from
package)
C Input Capacitance 1400 V = 0V, V = 25V
iss GS DS
C Output Capacitance 350 pF f = 1.0MHz
oss
C Reverse Transfer Capacitance 230
rss
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
I Continuous Source Current (Body Diode) 8.7
S
A
I Pulse Source Current (Body Diode) 35
SM
V Diode Forward Voltage 1.5 V T = 25C, I = 8.7A, V = 0V
SD j S GS
t Reverse Recovery Time 600 nS T = 25C, I = 8.7A, di/dt 100A/ s
rr j F
Q Reverse Recovery Charge 5.6 C V 50V
RR DD
t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
on S D
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R Junction-to-Case 1.25
thJC
C/W
R Case-to-sink 0.21
thCS
R Junction-to-Ambient 80 Typical socket mount
thJA
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2 www.irf.com