PD-91289E
IRFY240C,IRFY240CM
POWER MOSFET 200V, N-CHANNEL
THRU-HOLE (TO-257AA) HEXFET MOSFET TECHNOLOGY
Product Summary
Part Number RDS(on) ID Eyelets
IRFY240C 0.18 16A Ceramic
IRFY240CM 0.18 16A Ceramic
TO-257AA
HEXFET MOSFET technology is the key to International
Rectifiers advanced line of power MOSFET transistors.
The efficient geometry design achieves very low on-state
Features:
resistance combined with high transconductance. HEXFET
transistors also feature all of the well-established advantages Simple Drive Requirements
of MOSFETs, such as voltage control, very fast switching, Ease of Paralleling
ease of paralleling and electrical parameter temperature Hermetically Sealed
stability. They are well-suited for applications such as Electrically Isolated
switching power supplies, motor controls, inverters,
Ceramic Eyelets
choppers, audio amplifiers, high energy pulse circuits, and
Ideally Suited For Space Level
virtually any application where high reliability is required.
Applications
The HEXFET transistors totally isolated package eliminates
the need for additional isolating material between the device
and the heatsink. This improves thermal efficiency and
reduces drain capacitance.
Absolute Maximum Ratings
Parameter Units
I @ V = 10V, T = 25C Continuous Drain Current 16
D GS C
A
I @ V = 10V, T = 100C Continuous Drain Current 10.2
D GS C
I Pulsed Drain Current 64
DM
P @ T = 25C Max. Power Dissipation 100 W
D C
Linear Derating Factor 0.8 W/C
V Gate-to-Source Voltage 20 V
GS
E Single Pulse Avalanche Energy 580 mJ
AS
I Avalanche Current 16 A
AR
E Repetitive Avalanche Energy 10 mJ
AR
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T Operating Junction -55 to 150
J
T Storage Temperature Range C
STG
Lead Temperature 300(0.063in./1.6mm from case for 10 sec)
Weight 4.3 (Typical) g
For footnotes refer to the last page
www.irf.com 1
IRFY240C, IRFY240CM
Electrical Characteristics @ Tj = 25C (Unless Otherwise Specified)
Parameter Min Typ Max Units Test Conditions
BV Drain-to-Source Breakdown Voltage 200 V V = 0V, I = 1.0mA
DSS GS D
BV /T Temperature Coefficient of Breakdown 0.29 V/C Reference to 25C, I = 1.0mA
DSS J D
Voltage
R Static Drain-to-Source On-State 0.18 V = 10V, I = 10.2A
DS(on) GS D
Resistance
V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A
GS(th) DS GS D
g Forward Transconductance 6.1 S V > 15V, I = 10.2A
fs DS DS
I Zero Gate Voltage Drain Current 25 V = 160V ,V =0V
DSS DS GS
A
250 V = 160V,
DS
V = 0V, T = 125C
GS J
I Gate-to-Source Leakage Forward 100 V = 20V
GSS GS
nA
I Gate-to-Source Leakage Reverse -100 V = -20V
GSS GS
Q Total Gate Charge 60 V =10V, I = 16A
g GS D
Q Gate-to-Source Charge 10.6 nC V = 100V
gs DS
Q Gate-to-Drain (Miller) Charge 37.6
gd
t Turn-On Delay Time 20 V = 100V, I = 16A,
d(on) DD D
t Rise Time 152 V =10V, R =
r GS G
ns
t Turn-Off Delay Time 58
d(off)
t Fall Time 67
f
Measured from drain lead (6mm/0.25in.
L + L Total Inductance 6.8
S D
nH
from package) to source lead
(6mm/0.25in. from package)
C Input Capacitance 1300 V = 0V, V = 25V
iss GS DS
C Output Capacitance 400 pF f = 1.0MHz
oss
C Reverse Transfer Capacitance 130
rss
Source-Drain Diode Ratings and Characteristics
Parameter Min Typ Max Units Test Conditions
I Continuous Source Current (Body Diode) 16
S
A
I Pulse Source Current (Body Diode) 64
SM
V Diode Forward Voltage 1.5 V T = 25C, I = 16A, V = 0V
j S GS
SD
t Reverse Recovery Time 500 ns T = 25C, I = 16A, di/dt 100A/s
j
rr F
Q Reverse Recovery Charge 5.3 C V 50V
RR DD
t Forward Turn-On Time Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
on S D
Thermal Resistance
Parameter Min Typ Max Units Test Conditions
R Junction-to-Case 1.25
thJC
C/W
R Case-to-sink 0.21
thCS
R Junction-to-Ambient 80 Typical socket mount
thJA
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2 www.irf.com