IRFR110, SiHFR110 www.vishay.com Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating V (V) 100 DS Repetitive Avalanche Rated R ( )V = 10 V 0.54 DS(on) GS Surface Mount (IRFR110, SiHFR110) Q (Max.) (nC) 8.3 g Available in Tape and Reel Q (nC) 2.3 Fast Switching gs Ease of Paralleling Q (nC) 3.8 gd Material categorization: For definitions of Configuration Single compliance please see www.vishay.com/doc 99912 D DESCRIPTION Third generation power MOSFETs from Vishay provide the DPAK (TO-252) designer with the best combination of fast switching, ruggedized device design, low on-resistance and G D cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power S G S dissipation levels up to 1.5 W are possible in typical surface mount applications. N-Channel MOSFET ORDERING INFORMATION Package DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) DPAK (TO-252) Lead (Pb)-free and Halogen-free SiHFR110-GE3 SiHFR110TRL-GE3 SiHFR110TR-GE3 SiHFR110TRR-GE3 a a a IRFR110PbF IRFR110TRLPbF IRFR110TRPbF IRFR110TRRPbF Lead (Pb)-free a a a SiHFR110-E3 SiHFR110TL-E3 SiHFR110T-E3 SiHFR110TR-E3 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 100 DS V Gate-Source Voltage V 20 GS T = 25 C 4.3 C Continuous Drain Current V at 10 V I GS D T = 100 C 2.7 A C a Pulsed Drain Current I 17 DM Linear Derating Factor 0.20 W/C e Linear Derating Factor (PCB Mount) 0.020 b Single Pulse Avalanche Energy E 75 mJ AS a Repetitive Avalanche Current I 4.3 A AR a Repetitive Avalanche Energy E 2.5 mJ AR Maximum Power Dissipation T = 25 C 25 C P W D e Maximum Power Dissipation (PCB Mount) T = 25 C 2.5 A c Peak Diode Recovery dV/dt dV/dt 5.5 V/ns Operating Junction and Storage Temperature Range T , T - 55 to + 150 J stg C d Soldering Recommendations (Peak Temperature) for 10 s 260 Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. V = 25 V, starting T = 25 C, L = 8.1 mH, R = 25 , I = 4.3 A (see fig. 12). DD J g AS c. I 5.6 A, dI/dt 75 A/s, V V , T 150 C. SD DD DS J d. 1.6 mm from case. e. When mounted on 1 square PCB (FR-4 or G-10 material). S13-0171-Rev. F, 04-Feb-13 Document Number: 91265 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000IRFR110, SiHFR110 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R - 110 thJA Maximum Junction-to-Ambient R -50 C/W thJA a (PCB Mount) Maximum Junction-to-Case (Drain) R -5.0 thJC Note a. When mounted on 1 square PCB (FR-4 or G-10 material). SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 100 - - V DS GS D V Temperature Coefficient V /T Reference to 25 C, I = 1 mA - 0.13 - V/C DS DS J D Gate-Source Threshold Voltage V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 100 V, V = 0 V - - 25 DS GS Zero Gate Voltage Drain Current I A DSS V = 80 V, V = 0 V, T = 125 C - - 250 DS GS J b Drain-Source On-State Resistance R V = 10 V I = 2.6 A - - 0.54 DS(on) GS D Forward Transconductance g V = 50 V, I = 2.6 A 1.6 - - S fs DS D Dynamic Input Capacitance C - 180 - iss V = 0 V, GS Output Capacitance C -8V = 25 V, 0- pF oss DS f = 1.0 MHz, see fig. 5 Reverse Transfer Capacitance C -15- rss Total Gate Charge Q -- 8.3 g I = 5.6 A, V = 80 V, D DS Gate-Source Charge Q --V = 10 V nC 2.3 gs GS b see fig. 6 and 13 -- Gate-Drain Charge Q gd 3.8 Turn-On Delay Time t -6.9 - d(on) Rise Time t -16 - r V = 50 V, I = 5.6 A, DD D ns b R = 24 , R = 8.4 , see fig. 10 g D Turn-Off Delay Time t -15- d(off) Fall Time t -9.4- f D Between lead, Internal Drain Inductance L -4.5 - D 6 mm (0.25 ) from nH package and center of G die contact Internal Source Inductance L -7.5 - S S Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 4.3 S showing the A integral reverse G a Pulsed Diode Forward Current I p - n junction diode -- 17 SM S b Body Diode Voltage V T = 25 C, I = 4.3 A, V = 0 V -- 2.5 V SD J S GS Body Diode Reverse Recovery Time t - 100 200 ns rr b T = 25 C, I = 5.6 A, dI/dt = 100 A/s J F Body Diode Reverse Recovery Charge Q - 0.44 0.88 C rr Forward Turn-On Time t Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) on S D Notes a. Repetitive rating pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s duty cycle 2 %. S13-0171-Rev. F, 04-Feb-13 Document Number: 91265 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000