IRFR3707ZPbF IRFU3707ZPbF HEXFET Power MOSFET Applications High Frequency Synchronous Buck V 30V DSS Converters for Computer Processor Power R max 9.5m High Frequency Isolated DC-DC DS(on) Converters with Synchronous Rectification Qg 9.6nC for Telecom and Industrial Use D D S S D G G I- Pak D- Pak Benefits IRFR3707ZPbF IRFU3707ZPbF Very Low R at 4.5V V DS(on) GS Ultra - Low Gate Impedance G D S Fully Characterized Avalanche Voltage and Current Lead-Free Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRFU3707ZPbF Tube 75 IRFU3707ZPbF I-Pak Tube 75 IRFR3707ZPbF IRFR3707ZPbF D-Pak Tape and Reel Left 3000 IRFR3707ZTRLPbF Absolute Maximum Ratings Symbol Parameter Max. Units V Drain -to-Source Voltage 30 DS V V Gate-to-Source Voltage 20 GS V I T = 25C Continuous Drain Current, V 10V 56 D C GS I T = 100C Continuous Drain Current, V 10V 39 D C GS A I Pulsed Drain Current 220 DM P T = 25C Maximum Power Dissipation 50 W D C P T = 100C Maximum Power Dissipation 25 W D C Linear Derating Factor 0.33 W/C T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 3.0 R JC Junction-to-Ambient ( PCB Mount) 50 R C/W JA Junction-to-Ambient 110 R JA Notes through are on page 2. 1 2016-5-31 IRFR/U3707ZPbF Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 30 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.023 V/C Reference to 25C, I = 1mA V / T (BR)DSS J D 7.5 9.5 V = 10V, I = 15A GS D R Static Drain-to-Source On-Resistance m DS(on) 10 12.5 V = 4.5V, I = 12A GS D V Gate Threshold Voltage 1.35 1.80 2.25 V GS(th) V = V , I = 25A DS GS D V / T Gate Threshold Voltage Temp. Coefficient -5.0 mV/C GS(th) J 1.0 V = 24V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V = 24V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Trans conductance 71 S V = 15V, I = 12A DS D Q Total Gate Charge 9.6 14 g Q Pre-Vth Gate-to-Source Charge 2.6 V = 15V gs1 DS Q Post-Vth Gate-to-Source Charge 0.90 V = 4.5V gs2 GS nC Q Gate-to-Drain Charge 3.5 I = 12A gd D Q Gate Charge Overdrive 2.6 See Fig. 16 godr Q Switch Charge (Q + Q) 4.4 sw gs2 gd Q Output Charge 5.8 nC V = 15V, V = 0V oss DS GS t Turn-On Delay Time 8.0 V = 16V,V = 4.5V d(on) DD GS t Rise Time 11 I = 12A r D ns t Turn-Off Delay Time 12 Clamped Inductive Load d(off) t Fall Time 3.3 f C Input Capacitance 1150 V = 0V iss GS C Output Capacitance 260 pF V = 15V oss DS C Reverse Transfer Capacitance 120 = 1.0MHz rss Avalanche Characteristics Parameter Max. Units E Single Pulse Avalanche Energy 42 mJ AS I Avalanche Current 12 A AR E Repetitive Avalanche Energy 5.0 mJ AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 56 S (Body Diode) showing the A Pulsed Source Current integral reverse I 220 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.0 V T = 25C,I = 12A,V = 0V SD J S GS t Reverse Recovery Time 25 38 ns T = 25C ,I = 12A, V = 15V rr J F DS di/dt = 100A/s Q Reverse Recovery Charge 17 26 nC rr Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) t Forward Turn-On Time on S D Notes: Repetitive rating pulse width limited by max. junction temperature starting T = 25C, L = 0.58mH, R = 25 , I = 12A. J G AS Pulse width 400s duty cycle 2%. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 30A. When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994. 2 2016-5-31