IRFR3711ZPbF IRFU3711ZPbF Applications HEXFET Power MOSFET High Frequency Synchronous Buck Converters for Computer Processor Power V R max Qg DSS DS(on) High Frequency Isolated DC-DC 20V 5.7m 18nC Converters with Synchronous Rectification for Telecom and Industrial Use Lead-Free Benefits Very Low RDS(on) at 4.5V V GS Ultra-Low Gate Impedance D-Pak I-Pak IRFR3711Z IRFU3711Z Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 20 V V Gate-to-Source Voltage 20 GS I T = 25C Continuous Drain Current, V 10V 93 GS D C I T = 100C Continuous Drain Current, V 10V 66 GS A D C Pulsed Drain Current I 370 DM Maximum Power Dissipation P T = 25C 79 W D C Maximum Power Dissipation P T = 100C 39 D C Linear Derating Factor 0.53 W/C T Operating Junction and -55 to + 175 C J T Storage Temperature Range STG Soldering Temperature, for 10 seconds 300 (1.6mm from case) Thermal Resistance Parameter Typ. Max. Units R JC Junction-to-Case 1.9 Junction-to-Ambient (PCB Mount) R 50 C/W JA R Junction-to-Ambient 110 JA Notes through are on page 11 www.irf.com 1 12/13/04 Static T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 20 V V = 0V, I = 250A GS D V /T DSS J Breakdown Voltage Temp. Coefficient 13 mV/C Reference to 25C, I = 1mA D R m DS(on) Static Drain-to-Source On-Resistance 4.5 5.7 V = 10V, I = 15A GS D V = 4.5V, I = 12A 6.2 7.8 GS D V Gate Threshold Voltage 1.55 2.0 2.45 V V = V , I = 250A GS(th) DS GS D V /T Gate Threshold Voltage Coefficient -5.4 mV/C GS(th) J I DSS Drain-to-Source Leakage Current 1.0 A V = 16V, V = 0V DS GS 150 V = 16V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 100 nA V = 20V GS Gate-to-Source Reverse Leakage -100 V = -20V GS gfs Forward Transconductance 48 S V = 10V, I = 12A DS D Q Total Gate Charge 18 27 g Q gs1 Pre-Vth Gate-to-Source Charge 5.1 V = 10V DS Q gs2 Post-Vth Gate-to-Source Charge 1.8 nC V = 4.5V GS Q gd Gate-to-Drain Charge 6.5 I = 12A D Q godr Gate Charge Overdrive 4.6 See Fig. 16 Q Switch Charge (Q + Q ) sw gs2 gd 8.3 Q Output Charge 9.8 nC V = 10V, V = 0V oss DS GS t d(on) Turn-On Delay Time 12 V = 15V, V = 4.5V DD GS t r Rise Time 13 I = 12A D t d(off) Turn-Off Delay Time 15 ns Clamped Inductive Load t f Fall Time 5.2 C iss Input Capacitance 2160 V = 0V GS C Output Capacitance 700 pF V = 10V oss DS C rss Reverse Transfer Capacitance 360 = 1.0MHz Avalanche Characteristics Parameter Units Typ. Max. Single Pulse Avalanche Energy E AS 140 mJ I Avalanche Current 12 A AR Repetitive Avalanche Energy E 7.9 mJ AR Diode Characteristics Parameter Min. Typ. Max. Units Conditions 93 I S Continuous Source Current MOSFET symbol (Body Diode) A showing the I SM Pulsed Source Current 370 integral reverse (Body Diode) p-n junction diode. V SD Diode Forward Voltage 1.0 V T = 25C, I = 12A, V = 0V J S GS t rr Reverse Recovery Time 19 28 ns T = 25C, I = 12A, V = 10V DD J F Q di/dt = 100A/s rr Reverse Recovery Charge 9.4 14 nC t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com