IRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF HEXFET Power MOSFET Features Advanced Process Technology V 100V DSS Ultra Low On-Resistance R 18m DS(on) 175C Operating Temperature Fast Switching 42A I D Repetitive Avalanche Allowed up to T jmax Multiple Package Options D Lead-Free D S Description S D This HEXFET Power MOSFET utilizes the latest processing G G techniques to achieve extremely low on-resistance per silicon I- Pak D- Pak area. Additional features of this design are a 175C junction IRFU3710ZPbF IRFR3710ZPbF operating temperature, fast switching speed and improved I-Pak Lead form 701 repetitive avalanche rating . These features combine to make IRFU3710Z-701PbF Refer to page 11 for package outline this design an extremely efficient and reliable device for use in a wide variety of applications. G D S Gate Drain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity IRFU3710ZPbF Tube 75 IRFU3710ZPbF I-Pak Tube 75 IRFR3710ZPbF IRFR3710ZPbF D-Pak Tape and Reel Left 3000 IRFR3710ZTRLPbF Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 56 D C GS I T = 100C Continuous Drain Current, V 10V 39 D C GS A I T = 25C Continuous Drain Current, V 10V (Package Limited) 42 D C GS I Pulsed Drain Current 220 DM P T = 25C Maximum Power Dissipation 140 W D C Linear Derating Factor 0.95 W/C V Gate-to-Source Voltage 20 V GS E Single Pulse Avalanche Energy 150 AS (Thermally limited) mJ E Single Pulse Avalanche Energy Tested Value 200 AS (Tested ) I Avalanche Current See Fig.12a, 12b, 15, 16 A AR E Repetitive Avalanche Energy mJ AR T Operating Junction and -55 to + 175 J T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case 1.05 R JC R Junction-to-Ambient ( PCB Mount) 50 C/W JA Junction-to-Ambient 110 R JA 1 2016-5-31 IRFR/U3710ZPbF & IRFU3710Z-701PbF Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 100 V V = 0V, I = 250A (BR)DSS GS D Breakdown Voltage Temp. Coefficient 0.088 V/C Reference to 25C, I = 1mA V / T (BR)DSS J D R Static Drain-to-Source On-Resistance 15 18 m V = 10V, I = 33A DS(on) GS D V Gate Threshold Voltage 2.0 4.0 V V = V , I = 250A GS(th) DS GS D gfs Forward Trans conductance 39 S V = 25V, I = 33A DS D 20 V = 100V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 250 V = 100V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 200 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -200 V = -20V GS Q Total Gate Charge 69 100 I = 33A g D Q Gate-to-Source Charge 15 nC V = 80V gs DS Q Gate-to-Drain (Miller) Charge 25 V = 10V gd GS t Turn-On Delay Time 14 V = 50V d(on) DD t Rise Time 43 I = 33A r D ns t Turn-Off Delay Time 53 R = 6.8 d(off) G V = 10V t Fall Time 42 f GS Between lead, L Internal Drain Inductance 4.5 D 6mm (0.25in.) nH from package L Internal Source Inductance 7.5 S and center of die contact C Input Capacitance 2930 V = 0V iss GS C Output Capacitance 290 pF V = 25V oss DS C Reverse Transfer Capacitance 180 = 1.0MHz rss C Output Capacitance 1200 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C Output Capacitance 180 V = 0V, V = 80V, = 1.0MHz oss GS DS C eff. Effective Output Capacitance 430 V = 0V, V = 0V to 80V oss GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I 56 S (Body Diode) showing the A Pulsed Source Current integral reverse I 220 SM (Body Diode) p-n junction diode. V Diode Forward Voltage 1.3 V T = 25C,I = 33A,V = 0V SD J S GS t Reverse Recovery Time 35 53 ns T = 25C ,I = 33A, V = 50V rr J F DS Q Reverse Recovery Charge 41 62 nC di/dt = 100A/s rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L +L ) on S D Notes: Repetitive rating pulse width limited by max. junction temperature. (See fig. 11). starting T = 25C, L = 0.28mH, R = 25 , I = 33A,V =10V. Part not recommended for use above this value. J G AS GS Pulse width 1.0ms duty cycle 2%. C eff. is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V oss oss DS DSS Limited by T , see Fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. Jmax This value determined from sample failure population. 100% tested to this value in production. When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994. Refer to D-Pak package for Part Marking, Tape and Reel information 2 2016-5-31