StrongIRFET IRFB7734PbF IRFS7734PbF IRFSL7734PbF HEXFET Power MOSFET Application Brushed motor drive applications V 75V DSS D BLDC motor drive applications Battery powered circuits R typ. 2.8m DS(on) Half-bridge and full-bridge topologies G Synchronous rectifier applications max 3.5m Resonant mode power supplies S OR-ing and redundant power switches I 183A D DC/DC and AC/DC converters DC/AC inverters D D Benefits S S S D G Improved gate, avalanche and dynamic dV/dt ruggedness D G G Fully characterized capacitance and avalanche SOA TO-220AB Enhanced body diode dV/dt and dI/dt capability D2Pak TO-262 IRFB7734PbF Lead-free, RoHS compliant IRFS7734PbF IRFSL7734PbF G D S Gate Drain Source Base part number Package Type Standard Pack Orderable Part Number Form Quantity IRFB7734PbF TO-220 Tube 50 IRFB7734PbF IRFSL7734PbF TO-262 Tube 50 IRFSL7734PbF IRFS7734PbF D2-Pak Tube 50 IRFS7734PbF Tape and Reel Left 800 IRFS7734TRLPbF 10 200 I = 100A D 160 8 120 T = 125C J 6 80 4 40 T = 25C J 0 2 25 50 75 100 125 150 175 4 6 8 10 12 14 16 18 20 T , Case Temperature (C) C V Gate -to -Source Voltage (V) GS, Fig 2. Maximum Drain Current vs. Case Temperature Fig 1. Typical On-Resistance vs. Gate Voltage 1 www.irf.com 2014 International Rectifier Submit Datasheet Feedback November 5, 2014 R , Drain-to -Source On Resistance (m ) DS(on) I , Drain Current (A) D IRFB/S/SL7734PbF Absolute Maximum Rating Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V 183 A D C GS I T = 100C Continuous Drain Current, V 10V 130 D C GS I Pulsed Drain Current 650 DM P T = 25C Maximum Power Dissipation 290 W D C Linear Derating Factor 2.0 W/C V Gate-to-Source Voltage 20 V GS T Operating Junction and J -55 to + 175 T Storage Temperature Range C STG Soldering Temperature, for 10 seconds (1.6mm from case) 300 Mounting Torque, 6-32 or M3 Screw 10 lbfin (1.1 Nm) Avalanche Characteristics Symbol Parameter Max. Units E 350 mJ Single Pulse Avalanche Energy AS (Thermally limited) E Single Pulse Avalanche Energy 670 AS (Thermally limited) I Avalanche Current A AR See Fig 15, 16, 23a, 23b E Repetitive Avalanche Energy mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units Junction-to-Case R 0.51 JC R Case-to-Sink, Flat Greased Surface (TO-220) 0.50 CS C/W Junction-to-Ambient (TO-220) R 62 JA 2 Junction-to-Ambient (PCB Mount) (D Pak) R 40 JA Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage 75 V V = 0V, I = 250A (BR)DSS GS D V /T Breakdown Voltage Temp. Coefficient 50 mV/C Reference to 25C, I = 1mA D (BR)DSS J R Static Drain-to-Source On-Resistance 2.8 3.5 V = 10V, I = 100A m GS D DS(on) 3.5 V = 6.0V, I = 50A GS D V Gate Threshold Voltage 2.1 3.7 V V = V , I = 250A GS(th) DS GS D 1.0 V =75 V, V = 0V DS GS I Drain-to-Source Leakage Current A DSS 150 V =75V,V = 0V,T =125C DS GS J Gate-to-Source Forward Leakage 100 V = 20V GS I nA GSS Gate-to-Source Reverse Leakage -100 V = -20V GS R Gate Resistance 2.0 G Notes: Repetitive rating pulse width limited by max. junction temperature. Limited by T , starting T = 25C, L = 70H, R = 50 , I = 100A, V =10V. Jmax J G AS GS I 100A, di/dt 950A/s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. C eff. (TR) is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 80% V . oss oss DS DSS C eff. (ER) is a fixed capacitance that gives the same energy as C while V is rising from 0 to 80% V . oss oss DS DSS R is measured at T approximately 90C. J Limited by T , starting T = 25C, L = 1mH, R = 50 , I = 37A, V =10V. Jmax J G AS GS When mounted on 1 square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note AN-994: