IRFS4115PbF IRFSL4115PbF HEXFET Power MOSFET Applications D High Efficiency Synchronous Rectification in SMPS V 150V DSS Uninterruptible Power Supply R typ. 10.3m DS(on) High Speed Power Switching max. 12.1m Hard Switched and High Frequency Circuits G I 99A D (Silicon Limited) Benefits I 195A D (Package Limited) S Improved Gate, Avalanche and Dynamic dV/dt Ruggedness Fully Characterized Capacitance and Avalanche D SOA D Enhanced body diode dV/dt and dI/dt Capability Lead-Free S S D G G 2 TO-262 D Pak IRFSL4115PbF IRFS4115PbF GD S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T = 25C Continuous Drain Current, V 10V (Silicon Limited) 99 D C GS I T = 100C Continuous Drain Current, V 10V (Silicon Limited) 70 D C GS A I T = 25C Continuous Drain Current, V 10V (Wire Bond Limited) 195 D C GS I 396 Pulsed Drain Current DM P T = 25C Maximum Power Dissipation 375 W D C 2.5 Linear Derating Factor W/C V Gate-to-Source Voltage 20 V GS 18 dv/dt Peak Diode Recovery V/ns T Operating Junction and -55 to + 175 J T STG Storage Temperature Range C Soldering Temperature, for 10 seconds 300 (1.6mm from case) 10lb in (1.1N m) Mounting torque, 6-32 or M3 screw Avalanche Characteristics Single Pulse Avalanche Energy E 830 mJ AS (Thermally limited) Avalanche Current I See Fig. 14, 15, 22a, 22b, A AR Repetitive Avalanche Energy E mJ AR Thermal Resistance Symbol Parameter Typ. Max. Units R JC Junction-to-Case 0.4 C/W R Junction-to-Ambient 40 JA www.irf.com 1 03/09/11 Static T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V = 0V, I = 250 A V Drain-to-Source Breakdown Voltage 150 V (BR)DSS GS D Reference to 25C, I = 3.5mA V /T Breakdown Voltage Temp. Coefficient 0.18 V/C D (BR)DSS J = 10V, I = 62A R Static Drain-to-Source On-Resistance 10.3 12.1 V m GS D DS(on) V = V , I = 250 A V Gate Threshold Voltage 3.0 5.0 V DS GS D GS(th) I V = 150V, V = 0V Drain-to-Source Leakage Current 20 A DSS DS GS V = 150V, V = 0V, T = 125C 250 DS GS J I V = 20V Gate-to-Source Forward Leakage 100 nA GSS GS V = -20V Gate-to-Source Reverse Leakage -100 GS R Internal Gate Resistance 2.3 G Dynamic T = 25C (unless otherwise specified) J Symbol Parameter Min. Typ. Max. Units Conditions V = 50V, I = 62A gfs Forward Transconductance 97 S DS D Q I = 62A Total Gate Charge 77 120 nC g D V = 75V Q Gate-to-Source Charge 28 DS gs V = 10V Q Gate-to-Drain Mille) Charge 26 gd GS I = 62A, V =0V, V = 10V Q Total Gate Charge Sync. (Q - Q ) 51 D DS GS sync g gd = 98V t Turn-On Delay Time 18 ns V DD d(on) I = 62A t Rise Time 73 D r t R = 2.2 Turn-Off Delay Time 41 d(off) G t V = 10V Fall Time 39 f GS C V = 0V Input Capacitance 5270 pF iss GS C V = 50V Output Capacitance 490 oss DS C = 1.0 MHz, See Fig. 5 Reverse Transfer Capacitance 105 rss C eff. (ER) V = 0V, V = 0V to 120V , See Fig. 11 Effective Output Capacitance (Energy Related) 460 oss GS DS C eff. (TR) V = 0V, V = 0V to 120V Effective Output Capacitance (Time Related) 530 oss GS DS Diode Characteristics Conditions Symbol Parameter Min. Typ. Max. Units D I Continuous Source Current 99 A MOSFET symbol S showing the (Body Diode) G I integral reverse Pulsed Source Current 396 A SM S (Body Diode) p-n junction diode. V T = 25C, I = 62A, V = 0V Diode Forward Voltage 1.3 V SD J S GS t T = 25C V = 130V, Reverse Recovery Time 86 ns rr J R T = 125C I = 62A 110 J F Q T = 25C Reverse Recovery Charge 300 nC di/dt = 100A/s rr J = 125C 450 T J I T = 25C Reverse Recovery Current 6.5 A RRM J t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on Calculated continuous current based on maximum allowable junction C eff. (TR) is a fixed capacitance that gives the same charging time oss temperature. Bond wire current limit is 195A. Note that current as C while V is rising from 0 to 80% V . oss DS DSS limitations arising from heating of the device leads may occur with C eff. (ER) is a fixed capacitance that gives the same energy as oss some lead mounting arrangements. C while V is rising from 0 to 80% V . oss DS DSS Repetitive rating pulse width limited by max. junction When mounted on 1 square PCB (FR-4 or G-10 Material). For recom mended footprint and soldering techniques refer to application note AN-994. temperature. Recommended max EAS limit, starting T = 25C, J L = 0.17mH, R = 25, I = 100A, V =15V. GS JC G AS I 62A, di/dt 1040A/ s, V V , T 175C. SD DD (BR)DSS J Pulse width 400s duty cycle 2%. 2 www.irf.com