PMN50XP,165 NXP

PMN50XP P-channel TrenchMOS extremely low level FET Rev. 02 2 October 2007 Product data sheet 1. Product profile 1.1 General description Extremely low level P-channel enhancement mode Field-Effect Transistor (FET) in a plastic package. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features Low on-state losses Low threshold voltage 1.3 Applications Battery management Battery powered portable equipment Load Switching Low power DC to DC converters 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C; T 150 C ---20 V DS j j I drain current V =-4.5 V; T =25 C; ---4.8A D GS sp see Figure 1 and 3 Dynamic characteristics Q gate-drain charge V =-4.5 V; I =-4.7A; -1.3 -nC GD GS D V =-10 V; T =25 C; DS j see Figure 9 and 10 Static characteristics R drain-source on-state V =-4.5 V; I =-2.8A; - 4860m DSon GS D resistance T =25 C; see Figure 7 and 8 jNXP Semiconductors PMN50XP P-channel TrenchMOS extremely low level FET 2. Pinning information Table 2. Pinning Pin Symbol Description Simplified outline Graphic Symbol 1 D drain 6 5 4 D 2 D drain 3 G gate 132 G 4 S source 5 D drain S 6 D drain 003aaa671 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMN50XP TSOP6 plastic surface-mounted package (TSOP6); 6 leads SOT457 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C; T 150 C--20V DS j j V drain-gate voltage T 25 C; T 150 C; R =20k --20 V DGR j j GS V gate-source voltage -12 12 V GS I drain current T =25 C; V =-4.5V; see Figure 1 and 3 --4.8 A D sp GS T =100 C; V =-4.5V - -3 A sp GS I peak drain current T =25 C; t <10 s; pulsed; see Figure 3 - -19.4 A DM sp p P total power dissipation T =25 C; see Figure 2 -2.2 W tot sp T storage temperature -55 150 C stg T junction temperature -55 150 C j Source-drain diode I source current T =25 C--1.9A S sp I peak source current T =25 C; t 10 s; pulsed - -7.5 A SM sp p PMN50XP_2 NXP B.V. 2007. All rights reserved. Product data sheet Rev. 02 2 October 2007 2 of 11