Product Information

PMV250EPEAR

PMV250EPEAR electronic component of Nexperia

Datasheet
MOSFET 40V P-channel Trench MOSFET
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3000: USD 0.0679 ea
Line Total: USD 203.7

90210 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 3000  Multiples: 3000
Pack Size: 3000

 More Buying Options & Price Grid(s)

Availability Price Quantity
232138 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

PMV250EPEAR
Nexperia

1 : USD 0.4711
10 : USD 0.2717
100 : USD 0.1341
1000 : USD 0.1044
3000 : USD 0.0842
9000 : USD 0.0759
24000 : USD 0.0676
45000 : USD 0.0676
99000 : USD 0.0676

1576 - WHS 2


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 5
Multiples : 5

Stock Image

PMV250EPEAR
Nexperia

5 : USD 0.2028
25 : USD 0.1508
100 : USD 0.1378
155 : USD 0.1079
420 : USD 0.1027

90210 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3000
Multiples : 3000

Stock Image

PMV250EPEAR
Nexperia

3000 : USD 0.0679
9000 : USD 0.0666

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Product
Transistor Type
Type
Width
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
Brand Category
LoadingGif

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Additional Infomation About Product

PMV250EPEA 40 V, P-channel Trench MOSFET 20 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology 1 kV ESD protected AEC-Q101 qualified 3. Applications Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -40 V DS j V gate-source voltage -20 - 20 V GS I drain current V = -10 V T = 25 C 1 - - -1.5 A D GS amb Static characteristics R drain-source on-state V = -10 V I = -1.3 A T = 25 C - 180 240 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .Nexperia PMV250EPEA 40 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 D 1 G gate 2 S source 3 D drain G 1 2 TO-236AB (SOT23) S 017aaa259 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV250EPEA TO-236AB plastic surface-mounted package 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code 1 PMV250EPEA %JY 1 % = placeholder for manufacturing site code PMV250EPEA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 20 June 2014 2 / 16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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