X-On Electronics has gained recognition as a prominent supplier of PMV250EPEAR MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMV250EPEAR MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMV250EPEAR Nexperia

PMV250EPEAR electronic component of Nexperia
PMV250EPEAR Nexperia
PMV250EPEAR MOSFETs
PMV250EPEAR  Semiconductors

Images are for reference only
See Product Specifications
Part No. PMV250EPEAR
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET 40V P-channel Trench MOSFET
Datasheet: PMV250EPEAR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3062 ea
Line Total: USD 0.31 
Availability - 167681
Ship by Mon. 07 Apr to Wed. 09 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
167681
Ship by Mon. 07 Apr to Wed. 09 Apr
MOQ : 1
Multiples : 1
1 : USD 0.3062
10 : USD 0.2187
100 : USD 0.1068
500 : USD 0.0935
1000 : USD 0.0891
3000 : USD 0.0649
6000 : USD 0.0638
9000 : USD 0.0627
24000 : USD 0.0616

3807
Ship by Mon. 07 Apr to Wed. 09 Apr
MOQ : 1
Multiples : 1
1 : USD 0.574
5 : USD 0.3752
10 : USD 0.3122
50 : USD 0.21
100 : USD 0.1806

55290
Ship by Wed. 09 Apr to Tue. 15 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.0777
9000 : USD 0.0705
24000 : USD 0.0665

200790
Ship by Wed. 09 Apr to Tue. 15 Apr
MOQ : 3000
Multiples : 3000
3000 : USD 0.0763
9000 : USD 0.0691
24000 : USD 0.0661

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Height
Length
Product
Transistor Type
Type
Width
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Category
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We are delighted to provide the PMV250EPEAR from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMV250EPEAR and other electronic components in the MOSFETs category and beyond.

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PMV250EPEA 40 V, P-channel Trench MOSFET 20 June 2014 Product data sheet 1. General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Very fast switching Trench MOSFET technology 1 kV ESD protected AEC-Q101 qualified 3. Applications Relay driver High-speed line driver High-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -40 V DS j V gate-source voltage -20 - 20 V GS I drain current V = -10 V T = 25 C 1 - - -1.5 A D GS amb Static characteristics R drain-source on-state V = -10 V I = -1.3 A T = 25 C - 180 240 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .Nexperia PMV250EPEA 40 V, P-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 D 1 G gate 2 S source 3 D drain G 1 2 TO-236AB (SOT23) S 017aaa259 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV250EPEA TO-236AB plastic surface-mounted package 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code 1 PMV250EPEA %JY 1 % = placeholder for manufacturing site code PMV250EPEA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 20 June 2014 2 / 16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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