Product Information

PMV280ENEAR

PMV280ENEAR electronic component of Nexperia

Datasheet
MOSFET PMV280ENEA/SOT23 TO-236AB
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4588 ea
Line Total: USD 0.46

177930 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
344 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 5
Multiples : 5

Stock Image

PMV280ENEAR
Nexperia

5 : USD 0.2566
50 : USD 0.2072
150 : USD 0.1861
500 : USD 0.1598
3000 : USD 0.148
6000 : USD 0.1409

177930 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

PMV280ENEAR
Nexperia

1 : USD 0.4588
10 : USD 0.3369
100 : USD 0.1521
1000 : USD 0.1207
3000 : USD 0.1014
9000 : USD 0.093
24000 : USD 0.0893
45000 : USD 0.0893
99000 : USD 0.0882

955 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 3
Multiples : 1

Stock Image

PMV280ENEAR
Nexperia

3 : USD 0.3822
25 : USD 0.2007
100 : USD 0.1788
113 : USD 0.1529
309 : USD 0.1447

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Configuration
Transistor Type
Forward Transconductance - Min
Fall Time
Hts Code
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

PMV280ENEA 100 V, N-channel Trench MOSFET 11 April 2019 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Logic-level compatible Extended temperature range T = 175 C j Trench MOSFET technology ElectroStatic Discharge (ESD) protection > 2 kV HBM (class H2) AEC-Q101 qualified 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 100 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C 1 - - 1.1 A D GS amb Static characteristics R drain-source on-state V = 10 V I = 1.1 A T = 25 C - 285 385 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm .Nexperia PMV280ENEA 100 V, N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 3 1 G gate D 2 S source 3 D drain G 1 2 TO-236AB (SOT23) S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV280ENEA TO-236AB plastic surface-mounted package 3 leads SOT23 7. Marking Table 4. Marking codes Type number Marking code 1 PMV280ENEA EL% 1 % = placeholder for manufacturing site code PMV280ENEA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2019. All rights reserved Product data sheet 11 April 2019 2 / 15

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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