PMV31XN,215 NXP

PMV31XN N-channel TrenchMOS FET Rev. 2 30 November 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching Trench MOSFET technology Low threshold voltage 1.3 Applications Battery-powered motor control High-speed switching in set top box power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 150C --20 V DS j j I drain current T =25 C V = 4.5 V see Figure 2 --5.9 A D sp GS see Figure 3 P total power dissipation T =25 C see Figure 1 --2 W tot sp Static characteristics R drain-source on-state V =2.5 V I =1A T = 25 C see - 4453m DSon GS D j resistance Figure 9 see Figure 10 V =4.5 V I = 1.5 A T = 25 C see - 3137m GS D j Figure 9 see Figure 10 SOT23PMV31XN NXP Semiconductors N-channel TrenchMOS FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 3 2S source 3 D drain G 12 S SOT23 (TO-236AB) 017aaa253 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV31XN TO-236AB plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking codes 1 Type number Marking code PMV31XN %M4 1 % = placeholder for manufacturing site code 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 150 C - 20 V DS j j V drain-gate voltage T 25 C T 150 C R =20k -20 V DGR j j GS V gate-source voltage -12 12 V GS I drain current T = 100 C V =4.5 V see Figure 2 -3.75A D sp GS T =25 C V = 4.5 V see Figure 2 -5.9 A sp GS see Figure 3 I peak drain current T = 25 C pulsed t 10 s see - 23.7 A DM sp p Figure 3 P total power dissipation T =25 C see Figure 1 -2 W tot sp T storage temperature -55 150 C stg T junction temperature -55 150 C j Source-drain diode I source current T =25C - 1.7 A S sp PMV31XN All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 30 November 2011 2 of 14