PMV32UP,215 Nexperia

PMV32UP 20 V, 4 A P-channel Trench MOSFET Rev. 1 11 March 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.8 V drain-source on-state resistance Very fast switching rated Trench MOSFET technology 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T=25C ---20 V DS j voltage V gate-source -8 - 8 V GS voltage 1 drain current V =-4.5V T =25C ---4 A I D GS amb Static characteristics drain-source V =-4.5V I =-2.4A - 3236m R DSon GS D on-state T =25C j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .PMV32UP Nexperia 20 V, 4 A P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate D 3 2S source 3 D drain G 12 S SOT23 (TO-236AB) 017aaa094 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMV32UP TO-236AB plastic surface-mounted package 3 leads SOT23 4. Marking Table 4. Marking codes 1 Type number Marking code PMV32UP NF% 1 % = placeholder for manufacturing site code PMV32UP All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 11 March 2011 2 of 15