X-On Electronics has gained recognition as a prominent supplier of PMPB27EP,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMPB27EP,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMPB27EP,115 Nexperia

PMPB27EP,115 electronic component of Nexperia
PMPB27EP,115 Nexperia
PMPB27EP,115 MOSFETs
PMPB27EP,115  Semiconductors

Images are for reference only
See Product Specifications
Part No. PMPB27EP,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET PMPB27EP/SOT1220/REEL7
Datasheet: PMPB27EP,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6437 ea
Line Total: USD 0.64 
Availability - 3515
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
5034
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 406
Multiples : 1
406 : USD 0.3202
500 : USD 0.2418
1000 : USD 0.215
3000 : USD 0.1431

3515
Ship by Wed. 05 Feb to Fri. 07 Feb
MOQ : 1
Multiples : 1
1 : USD 0.6437
10 : USD 0.41
100 : USD 0.2028
1000 : USD 0.1683
3000 : USD 0.1298
9000 : USD 0.1287
24000 : USD 0.1265
45000 : USD 0.1221

4102
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3162
Multiples : 1
3162 : USD 0.1482

3953
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3162
Multiples : 1
3162 : USD 0.1482

21836342
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3162
Multiples : 1
3162 : USD 0.1482

5034
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 406
Multiples : 1
406 : USD 0.3202

162686
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3162
Multiples : 1
3162 : USD 0.1482

2910
Ship by Fri. 07 Feb to Thu. 13 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.1739
6000 : USD 0.1571
9000 : USD 0.1481
15000 : USD 0.1382
21000 : USD 0.1319
30000 : USD 0.13

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PMPB27EP,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMPB27EP,115 and other electronic components in the MOSFETs category and beyond.

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PMPB27EP 30 V, single P-channel Trench MOSFET 10 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Tin-plated 100 % solderable side pads for optical solder inspection 1.3 Applications Charging switch for portable devices DC-to-DC converters Power management in battery-driven portable devices Hard disk and computing power management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -30 V DS j V gate-source voltage -20 - 20 V GS I drain current V = -10 V T = 25 C t 5 s 1 - - -8.8 A D GS amb Static characteristics R drain-source on-state V = -10 V I = -6.1 A T = 25 C - 24 29 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .Nexperia PMPB27EP 30 V, single P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 D drain 1 6 2 D drain 7 2 5 G 3 G gate 3 4 8 S 4 S source 017aaa257 Transparent top view 5 D drain DFN2020MD-6 (SOT1220) 6 D drain 7 D drain 8 S source 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMPB27EP DFN2020MD-6 plastic thermal enhanced ultra thin small outline package no SOT1220 leads 6 terminals 4. Marking Table 4. Marking codes Type number Marking code PMPB27EP 1V 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - -30 V DS j V gate-source voltage -20 20 V GS I drain current V = -10 V T = 25 C t 5 s 1 - -8.8 A D GS amb V = -10 V T = 25 C 1 - -6.1 A GS amb V = -10 V T = 100 C 1 - -3.9 A GS amb I peak drain current T = 25 C single pulse t 10 s - -25 A DM amb p P total power dissipation T = 25 C 1 - 1.7 W tot amb PMPB27EP All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 10 September 2012 2 / 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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