X-On Electronics has gained recognition as a prominent supplier of PMPB27EP,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMPB27EP,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMPB27EP,115 Nexperia

PMPB27EP,115 electronic component of Nexperia
PMPB27EP,115 Nexperia
PMPB27EP,115 MOSFETs
PMPB27EP,115  Semiconductors

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See Product Specifications
Part No. PMPB27EP,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET PMPB27EP/SOT1220/REEL7
Datasheet: PMPB27EP,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5287 ea
Line Total: USD 0.53 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 607
Multiples : 1
607 : USD 0.2217
3000 : USD 0.169
6000 : USD 0.166
9000 : USD 0.1593

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 3000
Multiples : 3000
3000 : USD 0.1454

0
Ship by Fri. 09 May to Wed. 14 May
MOQ : 1
Multiples : 1
1 : USD 0.345
10 : USD 0.3376
30 : USD 0.3327
100 : USD 0.279

0
Ship by Wed. 30 Apr to Fri. 02 May
MOQ : 1
Multiples : 1
1 : USD 0.5287
10 : USD 0.415
100 : USD 0.245
500 : USD 0.1815
1000 : USD 0.1529
3000 : USD 0.1375
6000 : USD 0.1298
9000 : USD 0.1221

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 2205
Multiples : 1
2205 : USD 0.2126

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 2205
Multiples : 1
2205 : USD 0.2126

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 2205
Multiples : 1
2205 : USD 0.2126

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 607
Multiples : 1
607 : USD 0.2142

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 2205
Multiples : 1
2205 : USD 0.2126

0
Ship by Fri. 02 May to Thu. 08 May
MOQ : 9000
Multiples : 9000
9000 : USD 0.1469
15000 : USD 0.1416

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the PMPB27EP,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMPB27EP,115 and other electronic components in the MOSFETs category and beyond.

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PMPB27EP 30 V, single P-channel Trench MOSFET 10 September 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Tin-plated 100 % solderable side pads for optical solder inspection 1.3 Applications Charging switch for portable devices DC-to-DC converters Power management in battery-driven portable devices Hard disk and computing power management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -30 V DS j V gate-source voltage -20 - 20 V GS I drain current V = -10 V T = 25 C t 5 s 1 - - -8.8 A D GS amb Static characteristics R drain-source on-state V = -10 V I = -6.1 A T = 25 C - 24 29 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .Nexperia PMPB27EP 30 V, single P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 D drain 1 6 2 D drain 7 2 5 G 3 G gate 3 4 8 S 4 S source 017aaa257 Transparent top view 5 D drain DFN2020MD-6 (SOT1220) 6 D drain 7 D drain 8 S source 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMPB27EP DFN2020MD-6 plastic thermal enhanced ultra thin small outline package no SOT1220 leads 6 terminals 4. Marking Table 4. Marking codes Type number Marking code PMPB27EP 1V 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - -30 V DS j V gate-source voltage -20 20 V GS I drain current V = -10 V T = 25 C t 5 s 1 - -8.8 A D GS amb V = -10 V T = 25 C 1 - -6.1 A GS amb V = -10 V T = 100 C 1 - -3.9 A GS amb I peak drain current T = 25 C single pulse t 10 s - -25 A DM amb p P total power dissipation T = 25 C 1 - 1.7 W tot amb PMPB27EP All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 10 September 2012 2 / 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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