PMPB33XN Nexperia

PMPB33XN 30 V single N-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Trench MOSFET technology Very fast switching Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Tin-plated 100 % solderable side pads for optical solder inspection 1.3 Applications Charging switch for portable devices DC-to-DC converters Power management in battery-driven portables Hard disk and computing power management 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 30 V DS j V gate-source voltage -12 - 12 V GS I drain current V = 4.5 V T = 25 C t 5 s 1 - - 5.5 A D GS amb Static characteristics R drain-source on-state V = 4.5 V I = 4.3 A T = 25 C - 37 47 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm . Scan or click this QR code to view the latest information for this productNXP Semiconductors PMPB33XN 30 V single N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 D drain 1 6 2 D drain 7 2 5 G 3 G gate 3 4 8 S 4 S source 017aaa253 Transparent top view 5 D drain DFN2020MD-6 (SOT1220) 6 D drain 7 D drain 8 S source 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMPB33XN DFN2020MD-6 plastic thermal enhanced ultra thin small outline package no SOT1220 leads 6 terminals 4. Marking Table 4. Marking codes Type number Marking code PMPB33XN 1P 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - 30 V DS j V gate-source voltage -12 12 V GS I drain current V = 4.5 V T = 25 C t 5 s 1 - 5.5 A D GS amb V = 4.5 V T = 25 C 1 - 4.3 A GS amb V = 4.5 V T = 100 C 1 - 2.7 A GS amb I peak drain current T = 25 C single pulse t 10 s - 17 A DM amb p P total power dissipation T = 25 C 1 - 1.5 W tot amb PMPB33XN All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved Product data sheet 6 July 2012 2 / 14