PMPB40SNA NXP

PMPB40SNA 60 V N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Tin-plated 100 % solderable side pads for optical solder inspection AEC-Q101 qualified 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 60 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C - - 12.9 A D GS sp Static characteristics R drain-source on-state V = 10 V I = 4.8 A T = 25 C - 34 43 m DSon GS D j resistance Scan or click this QR code to view the latest information for this product DFN2020MD-6NXP Semiconductors PMPB40SNA 60 V N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 D drain 1 6 2 D drain 7 2 5 G 3 G gate 3 4 8 S 4 S source 017aaa253 Transparent top view 5 D drain DFN2020MD-6 (SOT1220) 6 D drain 7 D drain 8 S source 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMPB40SNA DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin small outline SOT1220 package no leads 6 terminals 7. Marking Table 4. Marking codes Type number Marking code PMPB40SNA 1E 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - 60 V DS j V gate-source voltage -20 20 V GS I drain current V = 10 V T = 25 C - 12.9 A D GS sp V = 10 V T = 25 C t 5 s 1 - 6.8 A GS amb V = 10 V T = 100 C 1 - 3 A GS amb I peak drain current T = 25 C single pulse t 10 s - 23 A DM amb p PMPB40SNA All information provided in this document is subject to legal disclaimers. NXP N.V. 2013. All rights reserved Product data sheet 29 October 2013 2 / 15