X-On Electronics has gained recognition as a prominent supplier of PMPB85ENEAX MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMPB85ENEAX MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMPB85ENEAX Nexperia

PMPB85ENEAX electronic component of Nexperia
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See Product Specifications
Part No.PMPB85ENEAX
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET 60V single N-channel Trench MOSFET
Datasheet: PMPB85ENEAX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.0944 ea
Line Total: USD 283.2 
Availability - 2910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
2910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.0944

7706
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 728
Multiples : 1
728 : USD 0.1785
1000 : USD 0.1538
3000 : USD 0.1461
6000 : USD 0.1385

1857
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.2831
50 : USD 0.2487
150 : USD 0.2341
500 : USD 0.2157
3000 : USD 0.1976
6000 : USD 0.1928

9385
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.2695
10 : USD 0.2057
100 : USD 0.1474
1000 : USD 0.1309
3000 : USD 0.1133

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the PMPB85ENEAX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMPB85ENEAX and other electronic components in the MOSFETs category and beyond.

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PMPB85ENEA 60 V, single N-channel Trench MOSFET 19 December 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits Trench MOSFET technology Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm Exposed drain pad for excellent thermal conduction Tin-plated 100 % solderable side pads for optical solder inspection AEC-Q101 qualified 3. Applications Relay driver High-speed line driver Low-side load switch Switching circuits 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 60 V DS j V gate-source voltage -20 - 20 V GS I drain current V = 10 V T = 25 C t 5 s 1 - - 4.4 A D GS amb Static characteristics R drain-source on-state V = 10 V I = 3 A T = 25 C - 72 95 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .Nexperia PMPB85ENEA 60 V, single N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 D drain 1 6 2 D drain 7 2 5 3 G gate G 3 4 8 4 S source Transparent top view 5 D drain DFN2020MD-6 (SOT1220) S 6 D drain 017aaa255 7 D drain 8 S source 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PMPB85ENEA DFN2020MD-6 DFN2020MD-6: plastic thermal enhanced ultra thin small outline SOT1220 package no leads 6 terminals 7. Marking Table 4. Marking codes Type number Marking code PMPB85ENEA 2C 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - 60 V DS j V gate-source voltage -20 20 V GS I drain current V = 10 V T = 25 C t 5 s 1 - 4.4 A D GS amb V = 10 V T = 25 C 1 - 3 A GS amb V = 10 V T = 100 C 1 - 1.9 A GS amb I peak drain current T = 25 C single pulse t 10 s - 12 A DM amb p PMPB85ENEA All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 19 December 2013 2 / 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
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