PMN80XP,115 Nexperia

PMN80XP 20 V, single P-channel Trench MOSFET Rev. 1 8 May 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits R specified at 1.8 V operation Fast switching DSon Trench MOSFET technology 1.3 Applications Relay driver High-side loadswitch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T=25C ---20 V DS amb V gate-source voltage -12 - 12 V GS 1 I drain current V =-4.5V T =25C t 5 s ---3.2 A D GS amb Static characteristics R drain-source on-state V =-4.5V I =-2.5A T = 25 C - 80 102 m DSon GS D j resistance 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 D drain D 6 5 4 2 D drain 3 G gate G 4S source 132 S 5 D drain SOT457 (TSOP6) 017aaa257 6 D drainPMN80XP Nexperia 20 V, single P-channel Trench MOSFET 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMN80XP TSOP6 plastic surface-mounted package (TSOP6) 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code PMN80XP WA 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T =25C - -20 V DS amb V gate-source voltage -12 12 V GS 1 I drain current V =-4.5 V T =25C t 5 s --3.2 A D GS amb 1 V =-4.5 V T =25C --2.5 A GS amb 1 V =-4.5 V T =100 C --1.6 A GS amb I peak drain current T = 25 C single pulse t 10 s - -10 A DM amb p 2 P total power dissipation T =25C - 385 mW tot amb 1 - 925 mW T = 25 C - 4000 mW sp T junction temperature -55 150 C j T ambient temperature -55 150 C amb T storage temperature -65 150 C stg Source-drain diode 1 I source current T =25C --1 A S amb 2 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm . 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. PMN80XP All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 8 May 2012 2 of 15