X-On Electronics has gained recognition as a prominent supplier of PMN70XPE,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PMN70XPE,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PMN70XPE,115 Nexperia

PMN70XPE,115 electronic component of Nexperia
PMN70XPE,115 Nexperia
PMN70XPE,115 MOSFETs
PMN70XPE,115  Semiconductors

Images are for reference only
See Product Specifications
Part No. PMN70XPE,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET PMN70XPE/SC-74/REEL7
Datasheet: PMN70XPE,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.7503
10 : USD 0.5882
100 : USD 0.134
1000 : USD 0.0994
3000 : USD 0.0878
9000 : USD 0.0826
24000 : USD 0.0763
45000 : USD 0.0753
99000 : USD 0.0722
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the PMN70XPE,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PMN70XPE,115 and other electronic components in the MOSFETs category and beyond.

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PMN70XPE 20 V, single P-channel Trench MOSFET 6 July 2012 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Very fast switching Trench MOSFET technology 2 kV ESD protection 1.3 Applications Relay driver High-speed line driver High-side loadswitch Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - -20 V DS amb V gate-source voltage -12 - 12 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - - -4.1 A D GS amb Static characteristics R drain-source on-state V = -4.5 V I = -2 A T = 25 C - 70 85 m DSon GS D j resistance 1 Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for 2 drain 6 cm .Nexperia PMN70XPE 20 V, single P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol D 1 D drain 6 5 4 2 D drain 3 G gate G 1 2 3 4 S source TSOP6 (SOT457) 5 D drain S 6 D drain 017aaa259 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMN70XPE TSOP6 plastic surface-mounted package (TSOP6) 6 leads SOT457 4. Marking Table 4. Marking codes Type number Marking code PMN70XPE WF 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - -20 V DS amb V gate-source voltage -12 12 V GS I drain current V = -4.5 V T = 25 C t 5 s 1 - -4.1 A D GS amb V = -4.5 V T = 25 C 1 - -3.2 A GS amb V = -4.5 V T = 100 C 1 - -2 A GS amb I peak drain current T = 25 C single pulse t 10 s - -12.8 A DM amb p P total power dissipation T = 25 C 2 - 500 mW tot amb 1 - 1220 mW T = 25 C - 6250 mW sp PMN70XPE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 6 July 2012 2 / 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
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